Dynamic mass-spectrometer system for pulsed gas-discharge studies

1974 ◽  
Vol 7 (3) ◽  
pp. 205-208 ◽  
Author(s):  
J M Austin ◽  
A L S Smith
1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.


Tellus B ◽  
2004 ◽  
Vol 56 (4) ◽  
pp. 322-338 ◽  
Author(s):  
RALPH F. KEELING ◽  
TEGAN BLAINE ◽  
BILL PAPLAWSKY ◽  
LAURA KATZ ◽  
CHRIS ATWOOD ◽  
...  

2002 ◽  
Vol 73 (2) ◽  
pp. 446-452 ◽  
Author(s):  
J. Schreiner ◽  
C. Voigt ◽  
P. Zink ◽  
A. Kohlmann ◽  
D. Knopf ◽  
...  

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