The Influence of Doping on the Etching of Si(111)
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AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.
2002 ◽
Vol 73
(2)
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pp. 446-452
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2007 ◽
Vol 18
(3)
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pp. 502-511
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1972 ◽
Vol 10
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pp. 487-490
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1974 ◽
Vol 7
(3)
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pp. 205-208
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1994 ◽
Vol 8
(6)
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pp. 525-532
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1984 ◽
Vol 75
(1)
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pp. 70-75
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1987 ◽
Vol 9
(2)
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pp. 161-168
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1983 ◽
Vol 46
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pp. 127-130
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