Simultaneous Effects of External Electric Field and Conduction Band Nonparabolicity on Optical Properties of a GaAs Quantum Dot Embedded at the Center of a GaAlAs Nano-Wire

2014 ◽  
Vol 61 (6) ◽  
pp. 765-772 ◽  
Author(s):  
Gh. Safarpour ◽  
M.A. Izadi ◽  
M. Novzari ◽  
E. Niknam ◽  
M.M. Golshan
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Electric Field ◽  
External Electric Field ◽  
Conduction Band ◽  
Gaas Quantum Dot ◽  
Band Nonparabolicity

The effect of an external electric field on the optical properties of a quantum-dot molecule with a resonant state of the D 2 − center

2013 ◽  
Vol 68 (5) ◽  
pp. 397-404
Author(s):  
V. Ch. Zhukovsky ◽  
V. D. Krevchik ◽  
A. B. Grunin ◽  
M. B. Semenov ◽  
R. V. Zaitsev
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Electric Field ◽  
External Electric Field ◽  
Resonant State

Effect of electric field, dielectric screening and conduction band nonparabolicity of donor in a quantum dot

2018 ◽  
Vol 32 (10) ◽  
pp. 1850122 ◽  
Author(s):  
A. Rejo Jeice ◽  
Sr. Gerardin Jayam ◽  
K. S. Joseph Wilson
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Conduction Band ◽  
Spherical Quantum Dot ◽  
Donor Binding Energy ◽  
Hydrogenic Donor ◽  
Dielectric Screening ◽  
Parabolic Confinement ◽  
Band Nonparabolicity

The effect of electric field, dielectric screening, conduction band nonparabolicity and effective mass mismatch of a hydrogenic donor in a GaAs/Ga[Formula: see text]Al[Formula: see text]As spherical quantum dot is investigated by assuming parabolic confinement using variational method. In the present work we obtain the increase of binding energy by decreasing the dot size for certain dot radii (50 Å) and the screening function gives uniformly larger values for smaller dot size. The effect of electric field and temperature decrease the donor binding energy whereas the conduction band nonparabolicity leads to increased binding energy.

scholarly journals Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21824-21831
Author(s):  
X. Q. Deng ◽  
R. Q. Sheng ◽  
Q. Jing
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
External Electric Field ◽  
Photogenerated Electron ◽  
Electron Hole ◽  
Electronic And Optical Properties ◽  
Vertical Strain

The CBM (VBM) of the heterostructure is mainly contributed by the BAs (arsenene), which will favor the separation of photogenerated electron–hole pairs.

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