scholarly journals Optical properties of GaAs/Al_{x}Ga_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field

2018 ◽  
Vol 21 (1) ◽  
pp. 13703 ◽  
Author(s):  
Holovatsky ◽  
Yakhnevych ◽  
Voitsekhivska
2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.


2013 ◽  
Vol 11 (8) ◽  
pp. 082501-82507
Author(s):  
N. R. Senthil Kumar N. R. Senthil Kumar ◽  
A. John Peter A. John Peter ◽  
Chang Woo Lee Chang Woo Lee

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier

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