High Efficient Green Emission from Organic Multi-quantum Wells Structure

1999 ◽  
Vol 16 (2) ◽  
pp. 149-151 ◽  
Author(s):  
Zhi-yuan Xie ◽  
Jing-song Huang ◽  
Chuan-nan Li ◽  
Bai-jun Chen ◽  
Shi-yong Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
High Efficient

Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission

2009 ◽  
Vol 1202 ◽  
Author(s):  
Wen Feng ◽  
Vladimir Kuryatkov ◽  
Dana Rosenbladt ◽  
Nenad Stojanovic ◽  
Mahesh Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Single Type ◽  
Selective Area Epitaxy ◽  
Polar Crystal ◽  
Selective Area ◽  
Narrow Ridge ◽  
Intensity Images ◽  
Two Peaks ◽  
Surface Morphologies

AbstractWe report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the <11-20> direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

2006 ◽  
Vol 89 (15) ◽  
pp. 151906 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Ray-Ming Lin ◽  
Dong-Yuan Lyu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Green emission from semipolar InGaN quantum wells grown on low-defect (112¯2) GaN templates fabricated on patternedr-sapphire

2015 ◽  
Vol 253 (1) ◽  
pp. 105-111 ◽  
Author(s):  
P. de Mierry ◽  
L. Kappei ◽  
F. Tendille ◽  
P. Vennéguès ◽  
M. Leroux ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Ingan Quantum Wells

On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells

2012 ◽  
Vol 9 (3-4) ◽  
pp. 465-468 ◽  
Author(s):  
M. J. Kappers ◽  
T. J. Badcock ◽  
R. Hao ◽  
M. A. Moram ◽  
S. Hammersley ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Ingan Quantum Wells

Efficient green emission from (112¯2) InGaN∕GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

2007 ◽  
Vol 90 (26) ◽  
pp. 261912 ◽  
Author(s):  
Y. Kawakami ◽  
K. Nishizuka ◽  
D. Yamada ◽  
A. Kaneta ◽  
M. Funato ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Green Emission

scholarly journals Исследование напряжeнности внутренних электрических полей в активной области светодиодных структур на основе InGaN/GaN с разным числом квантовых ям методом спектроскопии электропропускания

2020 ◽  
Vol 54 (4) ◽  
pp. 420
Author(s):  
А.Э. Асланян ◽  
Л.П. Авакянц ◽  
А.В. Червяков ◽  
А.Н. Туркин ◽  
С.С. Мирзаи ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Green Emission ◽  
Spectral Lines ◽  
Interband Transitions ◽  
Barrier Type ◽  
Piezoelectric Field

Abstract The internal electric fields of InGaN/GaN-based green-emission LED heterostructures with various numbers of quantum wells in the active region are investigated by electrotransmission spectroscopy. The frequencies of the observed spectral lines are attributed to possible types of interband transitions. An increase in the number of interband transitions of the “quantum well—quantum barrier” type with an increase in the number of quantum wells is found. This is explained by the nonidentical degree of segregation of In atoms in different GaN barriers layers. The strength of internal electric fields in quantum wells is calculated for various values of the bias of the p – n junction using a series of electrotransmission spectra. It is found that the strength of the internal piezoelectric field decreases from 3.20 to 2.82 MV/cm with an increase in the number of quantum wells.

Synthesis of Aqueous CdTe Nanocrystals with High Efficient Blue-Green Emission of Exciton

2012 ◽  
Vol 30 (4) ◽  
pp. 803-808 ◽  
Author(s):  
Haibao Shao ◽  
Chunlei Wang ◽  
Rongqing Li ◽  
Shuhong Xu ◽  
Haisheng Zhang ◽  
...  
Keyword(s):  
Green Emission ◽  
Cdte Nanocrystals ◽  
High Efficient

High efficient biexciton photoluminescence observed from single ZnCdSe quantum wells with continuous wave cold carrier generation

1999 ◽  
Vol 74 (8) ◽  
pp. 1138-1140 ◽  
Author(s):  
Yanfeng Wei ◽  
Daming Huang ◽  
Xingjun Wang ◽  
Gencai Yu ◽  
C. S. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Continuous Wave ◽  
Carrier Generation ◽  
High Efficient
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