Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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Hole defects in low free-carrier density GaAs grown by low-pressure metalorganic vapour phase epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/10/004 ◽

1992 ◽

Vol 7 (10) ◽

pp. 1241-1244 ◽

Cited By ~ 6

Author(s):

S A Goodman ◽

F D Auret ◽

G Myburg

Keyword(s):

Carrier Density ◽

Low Pressure ◽

Vapour Phase ◽

Free Carrier ◽

Vapour Phase Epitaxy ◽

Free Carrier Density ◽

Metalorganic Vapour Phase Epitaxy ◽

Hole Defects

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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91111-8 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 582-588 ◽

Cited By ~ 13

Author(s):

W. Taudt ◽

B. Wachtendorf ◽

R. Beccard ◽

A. Wahid ◽

M. Heuken ◽

...

Keyword(s):

Low Temperature ◽

Nitrogen Doping ◽

Low Pressure ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth ◽

Metalorganic Vapour Phase Epitaxy

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Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

physica status solidi (a) ◽

10.1002/pssa.200565341 ◽

2006 ◽

Vol 203 (7) ◽

pp. 1744-1748 ◽

Cited By ~ 7

Author(s):

M. Azize ◽

M. Leroux ◽

M. Laugt ◽

P. Gibart ◽

Z. Bougrioua

Keyword(s):

Low Pressure ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy

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Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00364-9 ◽

1998 ◽

Vol 191 (4) ◽

pp. 663-672 ◽

Cited By ~ 1

Author(s):

W. Taudt ◽

J. Xu ◽

A. Hardt ◽

H. Körfer ◽

Q. Liu ◽

...

Keyword(s):

Low Pressure ◽

Vapour Phase ◽

High Quality ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy

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Sn-doped InGaAs layers grown by low-pressure metalorganic vapour phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90733-1 ◽

1994 ◽

Vol 135 (1-2) ◽

pp. 129-134 ◽

Cited By ~ 3

Author(s):

A. Eisenbach ◽

E. Kuphal ◽

K. Miethe ◽

H.L. Hartnagel

Keyword(s):

Low Pressure ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy

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Strain Induced Compositional Modulations in AlGaAs Overlayers Induced by Lateral Surface Gratings

MRS Proceedings ◽

10.1557/proc-618-41 ◽

2000 ◽

Vol 618 ◽

Cited By ~ 1

Author(s):

U. Pietsch ◽

U. Zeimer ◽

L. Hofmann ◽

J. Grenzer ◽

S. Gramlich

Keyword(s):

Quantum Wells ◽

Grazing Incidence ◽

Vapour Phase ◽

High Index ◽

Lateral Strain ◽

Vapour Phase Epitaxy ◽

Al Content ◽

Compositional Modulation ◽

Surface Grating ◽

Metalorganic Vapour Phase Epitaxy

ABSTRACTStrain and compositional modulation in AlxGa1−xAs layers grown by metalorganic vapour phase epitaxy (MOVPE) over a sinusoidally shaped GaAs (001) surface grating were studied by scanning electron microscopy (SEM), X-ray grazing-incidence diffraction (GID) and photoluminescence (PL). Two growth temperatures and two compositions were chosen to realize planar overlayers. By SEM a periodic reduction in Al-content was found at the valley positions of the GaAs grating. The appearance of such vertical quantum wells (VQWs) has been explained by the growth rate anisotropy between high-index and (001) planes and a curvature-induced capillarity flow of Ga. Estimated from PL energies a larger reduction of the Al-concentration in the VQW and also at the high-index sidewall facets was found than compared to predictions from the capillarity flow theory. Using depth-resolved GID we show that the formation of VQWs is accompanied by a periodic lateral strain field. Therefore we assume, that the formation of the VQWs is influenced by strain induced diffusion due to the interaction of opposite sidewall facets.

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