Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.804695 ◽

2002 ◽

Vol 49 (11) ◽

pp. 1903-1909 ◽

Author(s):

M. Togo ◽

K. Watanabe ◽

T. Yamamoto ◽

N. Ikarashi ◽

T. Tatsumi ◽

...

Keyword(s):

Electrical Properties ◽

Gate Dielectric

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Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition

Applied Physics A ◽

10.1007/s00339-003-2187-4 ◽

2005 ◽

Vol 80 (2) ◽

pp. 321-324 ◽

Author(s):

J. Zhu ◽

Z.G. Liu ◽

M. Zhu ◽

G.L. Yuan ◽

J.M. Liu

Keyword(s):

Thermal Stability ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Gate Dielectric ◽

Pulsed Laser ◽

Laser Deposition ◽

High K ◽

High K Gate Dielectric

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied Physics Letters ◽

10.1063/1.4967186 ◽

2016 ◽

Vol 109 (19) ◽

pp. 193504 ◽

Author(s):

Yong Huang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Passivation Layer ◽

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Electrical Properties of Metal-Insulator-Semiconductor Devices with High Permittivity Gate Dielectric Layers

Supermaterials ◽

10.1007/978-94-010-0912-6_1 ◽

2000 ◽

pp. 1-20 ◽

Author(s):

M. Houssa ◽

P. W. Mertens ◽

M. M. Heyns ◽

A. Stesmans

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Semiconductor Devices ◽

High Permittivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Dielectric Layers

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters ◽

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117657 ◽

2011 ◽

Author(s):

L. X. Qian ◽

X. D. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

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Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate

physica status solidi (a) ◽

10.1002/pssa.200983554 ◽

2010 ◽

Vol 207 (6) ◽

pp. 1342-1344 ◽

Author(s):

Martin Eickelkamp ◽

Dirk Fahle ◽

Johannes Lindner ◽

Michael Heuken ◽

Christian Lautensack ◽

...

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Dielectric Thickness

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Enhanced Electrical Properties of Solution-processed Oxide Thin Film Transistors by Using ZrO2 Gate Dielectric Deposited by Oxygen-doped Solution

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abd062 ◽

2020 ◽

Author(s):

Chunlai Luo ◽

Ting Huang ◽

Changhao Li ◽

Yan Zhang ◽

Zhengmiao Zou ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Oxide Thin Film ◽

Solution Processed

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Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2020.3013069 ◽

2020 ◽

Vol 41 (9) ◽

pp. 1364-1367

Author(s):

Xin-Yuan Zhao ◽

Jing-Ping Xu ◽

Lu Liu ◽

Zhao Li

Keyword(s):

Electrical Properties ◽

Gate Dielectric

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