A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching

Semiconductor Science and Technology ◽

10.1088/0268-1242/12/7/023 ◽

1997 ◽

Vol 12 (7) ◽

pp. 907-912 ◽

Author(s):

G M Vanalme ◽

R L Van Meirhaeghe ◽

F Cardon ◽

P Van Daele

Keyword(s):

Barrier Height ◽

Electron Emission ◽

Reactive Ion Etching ◽

Schottky Barriers ◽

Ballistic Electron Emission Microscopy ◽

Ion Etching ◽

Ballistic Electron ◽

Height Change ◽

Emission Microscopy

Download Full-text

Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive-ion etching

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585939 ◽

1992 ◽

Vol 10 (6) ◽

pp. 3112 ◽

Author(s):

J. G. Couillard

Keyword(s):

Electron Emission ◽

Reactive Ion Etching ◽

Ballistic Electron Emission Microscopy ◽

Ion Etching ◽

Ballistic Electron ◽

Microscopy Investigation ◽

Emission Microscopy

Download Full-text

Erratum: ‘‘Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive-ion etching’’ [J. Vac. Sci. Technol. B 10, 3112 (1992)]

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586785 ◽

1993 ◽

Vol 11 (3) ◽

pp. 766 ◽

Author(s):

J. G. Couillard

Keyword(s):

Electron Emission ◽

Reactive Ion Etching ◽

Ballistic Electron Emission Microscopy ◽

Ion Etching ◽

Ballistic Electron ◽

Microscopy Investigation ◽

Emission Microscopy

Download Full-text

A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical polishing

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/4/021 ◽

1995 ◽

Vol 10 (4) ◽

pp. 504-508 ◽

Author(s):

J L Everaert ◽

R L Van Meirhaeghe ◽

W H Laflere ◽

F Cardon

Keyword(s):

Barrier Height ◽

Electron Emission ◽

Schottky Contacts ◽

Mechanical Polishing ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Height Change ◽

Emission Microscopy

Download Full-text

Comparison of the spatial variation in the barrier height of Si and GaAs Schottky diodes as measured by ballistic electron emission microscopy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50048-1 ◽

1994 ◽

pp. 261-266

Author(s):

Karen L. Kavanag ◽

A. Alec Talin ◽

Brent A. Morgan ◽

R. Stanley Williams ◽

Ken Ring

Keyword(s):

Spatial Variation ◽

Barrier Height ◽

Electron Emission ◽

Schottky Diodes ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

Cross Sectional Ballistic Electron Emission Microscopy for Schottky Barrier Height Profiling on Heterostructures

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.2204 ◽

2006 ◽

Vol 45 (3B) ◽

pp. 2204-2207

Author(s):

Doris Rakoczy ◽

Gottfried Strasser ◽

Jürgen Smoliner

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Electron Emission ◽

Schottky Barrier Height ◽

Ballistic Electron Emission Microscopy ◽

Cross Sectional ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

Metal/GaN Schottky barriers characterized by ballistic-electron-emission microscopy and spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590163 ◽

1998 ◽

Vol 16 (4) ◽

pp. 2286 ◽

Author(s):

L. D. Bell

Keyword(s):

Electron Emission ◽

Schottky Barriers ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

The origin of the integral barrier height in inhomogeneous Au/Co/GaAs67P33-Schottky contacts: A ballistic electron emission microscopy study

Journal of Applied Physics ◽

10.1063/1.366691 ◽

1998 ◽

Vol 83 (1) ◽

pp. 358-365 ◽

Author(s):

Alexander Olbrich ◽

Johann Vancea ◽

Franz Kreupl ◽

Horst Hoffmann

Keyword(s):

Barrier Height ◽

Electron Emission ◽

Microscopy Study ◽

Schottky Contacts ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM)

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/305 ◽

2001 ◽

Vol 16 (12) ◽

pp. 975-981 ◽

Author(s):

S Forment ◽

R L Van Meirhaeghe ◽

A De Vrieze ◽

K Strubbe ◽

W P Gomes

Keyword(s):

Comparative Study ◽

Electron Emission ◽

Schottky Barriers ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Journal of Applied Physics ◽

10.1063/1.368475 ◽

1998 ◽

Vol 84 (6) ◽

pp. 3226-3231 ◽

Author(s):

C. Detavernier ◽

R. L. Van Meirhaeghe ◽

R. Donaton ◽

K. Maex ◽

F. Cardon

Keyword(s):

Barrier Height ◽

Electron Emission ◽

Microscopy Study ◽

Schottky Contacts ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

Applied Physics Letters ◽

10.1063/1.3453866 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242106 ◽

Author(s):

Y. L. Che ◽

J. P. Pelz

Keyword(s):

Electron Emission ◽

Schottky Barriers ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text