Hole spin relaxation: optical deformation potential scattering

2005 ◽  
Vol 20 (8) ◽  
pp. 733-739 ◽  
Author(s):  
A Dargys
Keyword(s):  
Spin Relaxation ◽  
Potential Scattering ◽  
Deformation Potential

Impact of deformation potential scattering on free-carrier induced optical nonlinearities: An experimental study in GaAs

2002 ◽  
Vol 91 (7) ◽  
pp. 3992-3999 ◽  
Author(s):  
V. Kotov ◽  
J. Stiens ◽  
G. Shkerdin ◽  
W. Ranson ◽  
C. De Tandt ◽  
...  
Keyword(s):  
Experimental Study ◽  
Potential Scattering ◽  
Free Carrier ◽  
Optical Nonlinearities ◽  
Deformation Potential

Phonon-assisted luminescence of polar semiconductors: Fröhlich coupling versus deformation-potential scattering

2012 ◽  
Vol 85 (3) ◽  
Author(s):  
A. Chernikov ◽  
V. Bornwasser ◽  
M. Koch ◽  
S. Chatterjee ◽  
C. N. Böttge ◽  
...  
Keyword(s):  
Potential Scattering ◽  
Deformation Potential

scholarly journals The Electric and Dielectric Properties of SrF2:Tb3+ Nanocrystals Revealed by AC Impedance Spectroscopy

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 31
Author(s):  
Xiaoyan Cui ◽  
Tingjing Hu ◽  
Huangyu Wu ◽  
Junkai Zhang ◽  
Lihua Yang ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Activation Enthalpy ◽  
Ac Impedance ◽  
Potential Scattering ◽  
Deformation Potential ◽  
Ac Impedance Spectroscopy ◽  
Low Frequencies ◽  
Sample Resistance

The electric and dielectric properties of SrF2:Tb3+ nanocrystals were studied by AC impedance spectroscopy. The grain and grain boundary resistances and the complex permittivity with different Tb-doped concentrations were obtained. As the Tb-doping concentration increases, the grain and grain boundary resistances decrease until 6% and then increase. The Tb doping leads to the increase of interstitial F− quantity and the decrease of the activation enthalpy, and finally causes the decreases of grain and grain boundary resistances. When the Tb-doping is larger than 6%, the effect of the deformation potential scattering is dominant, which leads to the increases of grain and grain boundary resistances. The strong dispersion of the permittivity at the low frequencies indicates the carrier was hopping in the transport process. The ε′ and ε″ values at the low frequencies decrease as the sample resistance increases.

On the photoconductivity of hot electrons in semiconductors at low temperatures

1983 ◽  
Vol 61 (6) ◽  
pp. 821-824
Author(s):  
E. F. El-Wahidy
Keyword(s):  
Low Temperatures ◽  
Theoretical Study ◽  
Zero Point ◽  
Potential Scattering ◽  
Hot Electrons ◽  
Average Lifetime ◽  
Deformation Potential ◽  
Acoustic Phonons ◽  
Temperature Dependences ◽  
Point Lattice

A theoretical study is made of the photoconductivity of hot photoelectrons interacting with acoustic phonons in n-type germanium at low temperature, T = 4 K, when the equipartition of the energy of phonons is not obeyed. Assuming that the energy relaxation of photoelectrons takes place by the spontaneous emission of acoustic phonons, the energy distribution of photoelectrons is obtained using the deformation potential scattering by acoustic phonons for the zero point lattice. The distribution function is then used in calculating the photoconductivity and average lifetime of photoelectrons. New temperature dependences of the photoconductivity and average lifetime arc obtained. It is shown that the new results differ from those reported when equipartition is obeyed.

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