Persistent spectral hole burning and water content in -doped aluminosilicate glasses

1999 ◽  
Vol 11 (1) ◽  
pp. 335-343 ◽  
Author(s):  
Masayuki Nogami ◽  
Takehito Nagakura ◽  
Tomokatsu Hayakawa
1998 ◽  
Vol 23 (7) ◽  
pp. 543 ◽  
Author(s):  
Koji Fujita ◽  
Katsuhisa Tanaka ◽  
Kazuyuki Hirao ◽  
Naohiro Soga

1997 ◽  
Vol 82 (10) ◽  
pp. 5114-5120 ◽  
Author(s):  
Koji Fujita ◽  
Kazuyuki Hirao ◽  
Katsuhisa Tanaka ◽  
Naohiro Soga ◽  
Hiroko Sasaki

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


2021 ◽  
Vol 104 (1) ◽  
Author(s):  
Jia-Bin You ◽  
Xiao Xiong ◽  
Ping Bai ◽  
Zhang-Kai Zhou ◽  
Wan-Li Yang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document