Spectral Hole-Burning in Femtosecond Laser-Irradiated Eu3+-Doped Aluminosilicate Glasses

2005 ◽  
Vol 33 (1) ◽  
pp. 47-50 ◽  
Author(s):  
Gil Jae Park ◽  
Tomokatsu Hayakawa ◽  
Masayuki Nogami
Keyword(s):  
Femtosecond Laser ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Aluminosilicate Glasses ◽  
Spectral Hole

Persistent spectral hole burning and water content in -doped aluminosilicate glasses

1999 ◽  
Vol 11 (1) ◽  
pp. 335-343 ◽  
Author(s):  
Masayuki Nogami ◽  
Takehito Nagakura ◽  
Tomokatsu Hayakawa
Keyword(s):  
Water Content ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Aluminosilicate Glasses ◽  
Spectral Hole

Room-temperature persistent spectral hole burning of Eu^3+ in sodium aluminosilicate glasses

1998 ◽  
Vol 23 (7) ◽  
pp. 543 ◽  
Author(s):  
Koji Fujita ◽  
Katsuhisa Tanaka ◽  
Kazuyuki Hirao ◽  
Naohiro Soga
Keyword(s):  
Room Temperature ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Sodium Aluminosilicate ◽  
Aluminosilicate Glasses ◽  
Spectral Hole

Persistent spectral hole burning of Eu3+ ions in sodium aluminosilicate glasses

1997 ◽  
Vol 82 (10) ◽  
pp. 5114-5120 ◽  
Author(s):  
Koji Fujita ◽  
Kazuyuki Hirao ◽  
Katsuhisa Tanaka ◽  
Naohiro Soga ◽  
Hiroko Sasaki
Keyword(s):  
Hole Burning ◽  
Spectral Hole Burning ◽  
Sodium Aluminosilicate ◽  
Aluminosilicate Glasses ◽  
Spectral Hole

Spectral hole burning and fluorescence in femtosecond laser induced Sm2+-doped glasses

2004 ◽  
Vol 106 (2) ◽  
pp. 103-108 ◽  
Author(s):  
Gil Jae Park ◽  
Tomokatsu Hayakawa ◽  
Masayuki Nogami
Keyword(s):  
Femtosecond Laser ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Doped Glasses

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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