Depolarization and exciton-like shifts in modulation-doped single rectangular and diffusion-modified quantum wells under uniform electric fields

1999 ◽  
Vol 11 (5) ◽  
pp. 1353-1362 ◽  
Author(s):  
S Fung ◽  
S Panda ◽  
B K Panda
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
And Diffusion

Coherent model for resonant tunneling of electrons in double quantum wells under electric fields

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Resonant Tunneling ◽  
Double Quantum

scholarly journals The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

2019 ◽  
Author(s):  
Heng-Sheng Huang ◽  
Ping-Ray Huang ◽  
Mu-Chun Wang ◽  
Shuang-Yuan Chen ◽  
Shea-Jue Wang ◽  
...  
Keyword(s):  
Electric Fields ◽  
Current Model ◽  
Atomic Layer ◽  
Diffusion Current ◽  
Electrical Performance ◽  
Short Channel ◽  
Drive Current ◽  
Layer Deposition ◽  
And Diffusion ◽  
Better Than

A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

scholarly journals Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075306 ◽  
Author(s):  
Dhaneshwar Mishra ◽  
Soong Hyeong Lee ◽  
Youjung Seo ◽  
Y. Eugene Pak
Keyword(s):  
Quantum Wells ◽  
Electric Fields

scholarly journals Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells

2000 ◽  
Vol 639 ◽  
Author(s):  
E.M. Goldys ◽  
M. Godlewski ◽  
M.R. Phillips ◽  
A.A. Toropov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Recombination Mechanism ◽  
Decay Times ◽  
Piezoelectric Fields

ABSTRACTWe have examined multiple quantum well AlGaN/GaN structures with several quantum wells of varying widths. The structures had strain-free quantum wells and strained barriers. Strong piezoelectric fields in these structures led to a large red shift of the PL emission energies and long decay times were also observed. While the peak energies could be modelled using the effective mass approximation, the calculated free exciton radiative lifetimes were much shorter than those observed in experiments, indicating an alternative recombination mechanism, tentatively attributed to localised excitons. Cathodoluminescence depth profiling revealed an unusually small penetration range of electrons suggesting that electron-hole pairs preferentially remain within the multiple quantum well region due to the existing electric fields. Spatial fluctuations of the cathodoluminescence intensity were also observed.

Magnetoexciton escape from shallow quantum wells induced by in-plane electric fields

1999 ◽  
Vol 60 (23) ◽  
pp. 16027-16030 ◽  
Author(s):  
A. Getter ◽  
I. E. Perakis
Keyword(s):  
Quantum Wells ◽  
Electric Fields
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