Double-resonance determination of electrong-factors in muonium shallow-donor states

2004 ◽  
Vol 16 (40) ◽  
pp. S4707-S4720 ◽  
Author(s):  
J S Lord ◽  
S F J Cox ◽  
H V Alberto ◽  
J Piroto Duarte ◽  
R C Vilão
Keyword(s):  
Double Resonance ◽  
Shallow Donor ◽  
Donor States

Shallow Donor States in Semiconducting CdF2

1974 ◽  
Vol 66 (2) ◽  
pp. 537-545 ◽  
Author(s):  
J. M. Langer ◽  
T. Langer ◽  
G. L. Pearson ◽  
B. Krukowska-Fulde ◽  
U. Piekara
Keyword(s):  
Shallow Donor ◽  
Donor States

Determination of the sign of an l-type doubling constant by infrared-microwave double resonance

1976 ◽  
Vol 61 (1) ◽  
pp. 138-140 ◽  
Author(s):  
F. Herlemont ◽  
J. Thibault ◽  
J. Lemaire
Keyword(s):  
Double Resonance

scholarly journals Double Resonance Method for Determination of Gel Point

2019 ◽  
pp. 160-165
Author(s):  
Ivan S. Kozhevnikov ◽  
Lyubov K. Altunina ◽  
Andrey V. Bogoslovsky ◽  
Lyubov A. Stasyeva
Keyword(s):  
Double Resonance ◽  
Resonance Method ◽  
Gel Point ◽  
Cellulose Ether ◽  
Different Diameters

The application of double resonance method for determining the dynamics of fluidity changes of thermotropic gel-forming compositions based on cellulose ether is considered. To determine the gel point, a modified version of the ‘Rheokinetika’ viscometer including two identical sensors and measuring cells of different diameters

scholarly journals Влияние одноосной деформации в направлении [110] на релаксацию состояний мелких доноров мышьяка в германии

2020 ◽  
Vol 54 (9) ◽  
pp. 918
Author(s):  
В.В. Цыпленков ◽  
В.Н. Шастин
Keyword(s):  
Energy Levels ◽  
Optical Excitation ◽  
Uniaxial Stress ◽  
Shallow Donor ◽  
Stimulated Emission ◽  
Relaxation Rates ◽  
Emission Frequency ◽  
Donor States ◽  
Uniaxial Compressive Stress ◽  
Intracenter Transitions

Analysis of acoustical phonon assisted relaxation rates of arsenic donor states has been carried out in depends on uniaxial compressive stress of crystal along [110] direction under low temperature (< 10 K). As shown, under optical excitation the inversion population of donor energy levels is formed that depends on deformation of crystal. This give grounds to suppose that stimulated emission on arsenic shallow donor intracenter transitions in THz range is possible under optical excitation. As shown, uniaxial stress along [110] direction can result to switch laser transition and stimulated emission frequency

The Energy of Shallow Donor States in CdTe, GaAs, AgCl, AgBr Semiconductors

1985 ◽  
Vol 130 (1) ◽  
pp. 325-331 ◽  
Author(s):  
M. Grinberg ◽  
S. Łęgowski ◽  
H. Męczyńska
Keyword(s):  
Shallow Donor ◽  
Donor States
Sign in / Sign up

Export Citation Format

Share Document