The effects of the spin–orbit coupling strength of the two configurations of rare-earth ions on the magneto-optical properties in garnets

Abstract Quantum information processing based on magnetic ions has potential for applications as the ions can be modified in their electronic properties and assembled by a variety of chemical methods. For these systems to achieve individual spin addressability and high energy efficiency, we exploited the electric field as a tool to manipulate the quantum behaviours of the rare-earth ion which has strong spin-orbit coupling. A Ce:YAG single crystal was employed with considerations to the dynamics and the symmetry requirements. The Stark effect of the Ce3+ ion was observed and measured. When demonstrated as a quantum phase gate, the electric field manipulation exhibited high efficiency which allowed up to 57 π/2 operations before decoherence with optimized field direction. It was also utilized to carry out quantum bang-bang control, as a method of dynamic decoupling, and the refined Deutsch-Jozsa algorithm. Our experiments highlighted rare-earth ions as potentially applicable qubits because they offer enhanced spin-electric coupling which enables high-efficiency quantum manipulation.

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The role of the spin-orbit coupling strength in the MO effects of magnetic insulators

IEEE Transactions on Magnetics ◽

10.1109/20.951188 ◽

2001 ◽

Vol 37 (4) ◽

pp. 2411-2413 ◽

Cited By ~ 2

Author(s):

You Xu ◽

Jiehui Yang ◽

Xijuan Zhang ◽

Fang Zhang ◽

M. Guillot

Keyword(s):

Coupling Strength ◽

Orbit Coupling ◽

Spin Orbit Coupling ◽

Spin Orbit ◽

Magnetic Insulators

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Nonequivalent Spin Exchanges of the Hexagonal Spin Lattice Affecting the Low-Temperature Magnetic Properties of RInO3(R = Gd, Tb, Dy): Importance of Spin–Orbit Coupling for Spin Exchanges between Rare-Earth Cations with Nonzero Orbital Moments

Inorganic Chemistry ◽

10.1021/acs.inorgchem.8b01274 ◽

2018 ◽

Vol 57 (15) ◽

pp. 9260-9265 ◽

Cited By ~ 3

Author(s):

Elijah E. Gordon ◽

Xiyue Cheng ◽

Jaewook Kim ◽

Sang-Wook Cheong ◽

Shuiquan Deng ◽

...

Keyword(s):

Magnetic Properties ◽

Rare Earth ◽

Low Temperature ◽

Orbit Coupling ◽

Spin Orbit Coupling ◽

Spin Orbit ◽

Spin Lattice

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Investigation of organic magnetoresistance dependence on spin-orbit coupling using 8-hydroxyquinolinate rare-earth based complexes

Applied Physics Letters ◽

10.1063/1.4950864 ◽

2016 ◽

Vol 108 (20) ◽

pp. 203303 ◽

Cited By ~ 1

Author(s):

R. S. Carvalho ◽

D. G. Costa ◽

H. C. Ávila ◽

T. B. Paolini ◽

H. F. Brito ◽

...

Keyword(s):

Rare Earth ◽

Orbit Coupling ◽

Spin Orbit Coupling ◽

Spin Orbit ◽

Organic Magnetoresistance

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SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

Modern Physics Letters B ◽

10.1142/s0217984908017199 ◽

2008 ◽

Vol 22 (27) ◽

pp. 2667-2676 ◽

Cited By ~ 1

Author(s):

DE LIU ◽

HONGMEI ZHANG

Keyword(s):

Spin Polarization ◽

Coupling Strength ◽

Channel Length ◽

Ferromagnetic Semiconductor ◽

Orbit Coupling ◽

Tunneling Magnetoresistance ◽

Spin Orbit Coupling ◽

Spin Orbit ◽

Rashba Spin ◽

Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

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