Electronic structure of amorphous Si-N compounds

1993 ◽  
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1994 ◽  
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2018 ◽  
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2002 ◽  
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2019 ◽  
Vol 21 (24) ◽  
pp. 13248-13257 ◽  
Author(s):  
Reza Vatan Meidanshahi ◽  
Stuart Bowden ◽  
Stephen M. Goodnick

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.


1995 ◽  
Vol 7 (2) ◽  
pp. 279-288 ◽  
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RSC Advances ◽  
2014 ◽  
Vol 4 (69) ◽  
pp. 36485-36493 ◽  
Author(s):  
Zhi-Gang Duan ◽  
Zong-Yan Zhao ◽  
Pei-Zhi Yang

The optical properties of Si–O–N compounds are determined not only by their component, but also by their microstructure.


2010 ◽  
Vol 82 (16) ◽  
Author(s):  
Li Zeng ◽  
J. X. Cao ◽  
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