The possibility of integrating plasmonic nanostructures directly on an active device, such as a silicon photodetector, is a challenging task of interest in many applications. Among the available nanofabrication techniques to realize plasmonic nanostructures, Focused Ion Beam (FIB) is surely the most promising, even if it is characterized by certain limitations, such as ion implantation in the substrate. In this work, we demonstrate the direct integration of plasmonic nanostructures directly on an active Si-photodetector by patterning a silver film with FIB. To avoid ion implantation and to therefore guarantee unaltered device behavior, both the patterning parameters and the geometry of the nanostructures were implemented by Montecarlo and Finite-Difference Time-Domain simulations.
Optimization of Focused Ion Beam Patterning Parameters for Direct Integration of Plasmonic Nanostructures on Silicon Photodiodes