scholarly journals Optimization of Focused Ion Beam Patterning Parameters for Direct Integration of Plasmonic Nanostructures on Silicon Photodiodes

2021 ◽  
Vol 10 (1) ◽  
pp. 2
Author(s):  
Elia Scattolo ◽  
Alessandro Cian ◽  
Damiano Giubertoni ◽  
Giovanni Paternoster ◽  
Luisa Petti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Finite Difference Time Domain ◽  
Focused Ion Beam ◽  
Silver Film ◽  
Ion Beam ◽  
Plasmonic Nanostructures ◽  
Direct Integration ◽  
Active Device ◽  
Difference Time ◽  
Ion Beam Patterning

The possibility of integrating plasmonic nanostructures directly on an active device, such as a silicon photodetector, is a challenging task of interest in many applications. Among the available nanofabrication techniques to realize plasmonic nanostructures, Focused Ion Beam (FIB) is surely the most promising, even if it is characterized by certain limitations, such as ion implantation in the substrate. In this work, we demonstrate the direct integration of plasmonic nanostructures directly on an active Si-photodetector by patterning a silver film with FIB. To avoid ion implantation and to therefore guarantee unaltered device behavior, both the patterning parameters and the geometry of the nanostructures were implemented by Montecarlo and Finite-Difference Time-Domain simulations.

scholarly journals Butterfly-Inspired 2D Periodic Tapered-Staggered Subwavelength Gratings Designed Based on Finite Difference Time Domain Method

2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
Houxiao Wang ◽  
Wei Zhou ◽  
Er Ping Li ◽  
Rakesh Ganpat Mote
Keyword(s):  
Finite Difference ◽  
Time Domain ◽  
Finite Difference Time Domain ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fdtd Method ◽  
Subwavelength Structures ◽  
Surface Reflection ◽  
Subwavelength Gratings ◽  
Difference Time

The butterfly-inspired 2D periodic tapered-staggered subwavelength gratings were developed mainly using finite difference time domain (FDTD) method, assisted by using focused ion beam (FIB) nanoscale machining or fabrication. The periodic subwavelength structures along the ridges of the designed gratings may change the electric field intensity distribution and weaken the surface reflection. The performance of the designed SiO2gratings is similar to that of the corresponding Si gratings (the predicted reflectance can be less than around 5% for the bandwidth ranging from 0.15 μm to 1 μm). Further, the antireflection performance of the designedx-unspaced gratings is better than that of the correspondingx-spaced gratings. Based on the FDTD designs and simulated results, the butterfly-inspired grating structure was fabricated on the silicon wafer using FIB milling, reporting the possibility to fabricate these FDTD-designed subwavelength grating structures.

Nanoholes with Defects Fabricated by Focused Ion Beam Milling

2013 ◽  
Vol 661 ◽  
pp. 70-73
Author(s):  
Xiao Xiao Jiang ◽  
Qiong Chan Gu ◽  
Feng Wen Wang ◽  
Zhen He Ma ◽  
Jiang Tao Lv ◽  
...  
Keyword(s):  
Optical Properties ◽  
Finite Difference ◽  
Time Domain ◽  
Finite Difference Time Domain ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Nanohole Arrays ◽  
Difference Time ◽  
Optical Waveguiding

Subwavelength nanohole arrays have been thoroughly studied for years. However, investigations on nanoholes with defects are seldom reported. Here, we study the optical properties of nanohole arrays with different defects which are fabricated by focused ion beam lithography. Finite difference time domain simulations are also performed to verify the experimental results. Our approach may find extensive applications in sensing and optical waveguiding.

High-speed focused-ion-beam patterning for guiding the growth of anodic alumina nanochannel arrays

2003 ◽  
Vol 82 (8) ◽  
pp. 1281-1283 ◽  
Author(s):  
N. W. Liu ◽  
A. Datta ◽  
C. Y. Liu ◽  
Y. L. Wang
Keyword(s):  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Anodic Alumina ◽  
Ion Beam Patterning ◽  
Nanochannel Arrays

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

Structuring of Conducting Polymers by Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Klaus Edinger ◽  
Stefanie Schiestel ◽  
Gerhard K. Wolf
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrochemical Behaviour ◽  
Three Dimensional ◽  
Electrochemical Treatment ◽  
Lateral Structures ◽  
Scanning Electron

AbstractConducting polypyrrole polymer films have been modified by ion implantation. The resulting cross linking leads to changes in resistivity and electrochemical behaviour. By ion implantation through masks or with a focused ion beam lateral structures can be produced which can be imaged by scanning electron microscopy and optical absorption. The implanted polypyrrole layers can be removed by electrochemical treatment while not implanted regions can be electroplated. Therefore in combination with electrochemical treatment three dimensional structures have been generated and were investigated by atomic force microscopy. In order to study structures in the submicrometer range implantation experiments with a focused ion beam were performed and the minimal line widths were investigated by scanning electron microscopy.

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