The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures

2012 ◽  
Vol 23 (37) ◽  
pp. 375201 ◽  
Author(s):  
Vadim Sh Yalishev ◽  
Shavkat U Yuldashev ◽  
Yeon Soo Kim ◽  
Bae Ho Park
Keyword(s):  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Memory Structures

Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

2012 ◽  
Vol 12 (2) ◽  
pp. 369-372 ◽  
Author(s):  
S.R. Lee ◽  
H.M. Kim ◽  
K. Char ◽  
J.H. Jang ◽  
M. Kim ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Nio Films

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

2012 ◽  
Vol 100 (23) ◽  
pp. 231603 ◽  
Author(s):  
Rui Yang ◽  
Kazuya Terabe ◽  
Tohru Tsuruoka ◽  
Tsuyoshi Hasegawa ◽  
Masakazu Aono
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Migration Process ◽  
Oxygen Migration ◽  
Bipolar Resistance Switching

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Bipolar Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 457 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Hsiwen Yang
Keyword(s):  
Zirconium Oxide ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Bipolar Resistance Switching

scholarly journals Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

APL Materials ◽  
2014 ◽  
Vol 2 (6) ◽  
pp. 066103 ◽  
Author(s):  
Shinbuhm Lee ◽  
Jae Sung Lee ◽  
Jong-Bong Park ◽  
Yong Koo Kyoung ◽  
Myoung-Jae Lee ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Resistance Switching ◽  
Anomalous Effect ◽  
Bipolar Resistance Switching

Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

2014 ◽  
Vol 23 (8) ◽  
pp. 087304
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Gao-Feng Zhao ◽  
Wei-Feng Zhang ◽  
Yi-Dong Xia ◽  
...  
Keyword(s):  
Memory Device ◽  
Resistance Switching ◽  
Bipolar Resistance Switching
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