Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

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Constructing film composites of silicon nanowires@CdS quantum dot arrays with ameliorated photocatalytic performance

New Journal of Chemistry ◽

10.1039/c8nj02883d ◽

2018 ◽

Vol 42 (17) ◽

pp. 14096-14103 ◽

Cited By ~ 10

Author(s):

Xin Lin ◽

Shao-Hai Li ◽

Kang-Qiang Lu ◽

Zi-Rong Tang ◽

Yi-Jun Xu

Keyword(s):

Quantum Dot ◽

Silicon Nanowires ◽

Photocatalytic Performance ◽

Silicon Nanowire ◽

Nanowire Arrays ◽

Type Silicon ◽

Silicon Nanowire Arrays ◽

Cds Quantum Dot ◽

P Type ◽

Film Composites

The film composites of n-type CdS QD decorated p-type silicon nanowire arrays are assembled toward H2 evolution with improved photoactivity and photostability.

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Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.642 ◽

2013 ◽

Vol 652-654 ◽

pp. 642-646 ◽

Cited By ~ 1

Author(s):

Hsin Luen Tsai

Keyword(s):

Silicon Nanowires ◽

Power Output ◽

Silicon Nanowire ◽

Solution Concentration ◽

Nanowire Arrays ◽

Thermoelectric Device ◽

Etching Time ◽

Electroless Etching ◽

Silicon Nanowire Arrays ◽

Chip Size

The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and the power outputs of silicon nanowire thermoelectric devices were calculated. The longer the silicon nanowire thermoelectric device lines, the greater the power output of thermoelectric device is. The SiNWs TED power output in the present study ranges from 1.62 to 7.2 nano-Watt with the chip size 2×2 cm2 while the applied temperature at 150 °C.

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Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2020.2684 ◽

2020 ◽

Vol 15 (1) ◽

pp. 127-135

Author(s):

Dao Tran Cao ◽

Cao Tuan Anh ◽

Luong Truc Quynh Ngan

Keyword(s):

Silicon Nanowires ◽

Chemical Etching ◽

Silicon Oxide ◽

Electrochemical Etching ◽

Silicon Nanowire ◽

Oxide System ◽

Nanowire Arrays ◽

Photoluminescence Intensity ◽

Silicon Nanowire Arrays ◽

Silicon Nanocrystallites

Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

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Substrate porosity induces phenotypic alterations in retinal cells cultured on silicon nanowires

RSC Advances ◽

10.1039/c4ra04121f ◽

2014 ◽

Vol 4 (53) ◽

pp. 27888-27897 ◽

Cited By ~ 17

Author(s):

Gaëlle Piret ◽

Maria-Thereza Perez ◽

Christelle N. Prinz

Keyword(s):

Drug Delivery ◽

Silicon Nanowires ◽

Chemical Etching ◽

Silicon Nanowire ◽

Nanowire Arrays ◽

Retinal Cells ◽

Silicon Nanowire Arrays ◽

Cells Cultured

Limitations of silicon nanowire arrays produced using chemical etching for drug delivery.

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Nanowires: Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal-Assisted Chemical Etching (Adv. Funct. Mater. 1/2014)

Advanced Functional Materials ◽

10.1002/adfm.201470005 ◽

2014 ◽

Vol 24 (1) ◽

pp. 105-105 ◽

Cited By ~ 1

Author(s):

Junghoon Yeom ◽

Daniel Ratchford ◽

Christopher R. Field ◽

Todd H. Brintlinger ◽

Pehr E. Pehrsson

Keyword(s):

Chemical Etching ◽

Silicon Nanowire ◽

Nanowire Arrays ◽

Silicon Nanowire Arrays ◽

Metal Assisted Chemical Etching

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Metal-Assisted Chemical Etching of Silicon: Preparation of Silicon Nanowire Arrays

ECS Meeting Abstracts ◽

10.1149/ma2008-02/22/1810 ◽

2008 ◽

Keyword(s):

Chemical Etching ◽

Silicon Nanowire ◽

Nanowire Arrays ◽

Silicon Nanowire Arrays ◽

Metal Assisted Chemical Etching

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Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

International Journal of Photoenergy ◽

10.1155/2012/701809 ◽

2012 ◽

Vol 2012 ◽

pp. 1-8 ◽

Cited By ~ 4

Author(s):

Chien-Wei Liu ◽

Chin-Lung Cheng ◽

Bau-Tong Dai ◽

Chi-Han Yang ◽

Jun-Yuan Wang

Keyword(s):

Solar Cells ◽

Silicon Nanowires ◽

Chemical Etching ◽

Low Cost ◽

Light Trapping ◽

Silicon Nanowire ◽

Great Promise ◽

Etching Time ◽

Wet Chemical ◽

Wet Chemical Etching

Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW) solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs) declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

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