Origin of two special Raman modes in dilute nitrides

2020 ◽  
Vol 53 (22) ◽  
pp. 225104
Author(s):  
Jingli Chen ◽  
Jun Tang
Keyword(s):  
Dilute Nitrides ◽  
Raman Modes

Effect of Bottom Electrodes on Structural and Electrical Properties of Laser Ablated SrBi2Ta2O9 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Rasmi R. Das ◽  
W. Pérez ◽  
P. Bhattacharya ◽  
Ram. S. Katiyar
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ferroelectric Properties ◽  
High Resistivity ◽  
Emission Model ◽  
X Ray Diffraction ◽  
Oxide Electrodes ◽  
Maximum Value ◽  
Structural And Electrical Properties ◽  
Raman Modes

AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.

scholarly journals Band anticrossing in dilute nitrides

2004 ◽  
Vol 16 (31) ◽  
pp. S3355-S3372 ◽  
Author(s):  
W Shan ◽  
K M Yu ◽  
W Walukiewicz ◽  
J Wu ◽  
J W Ager ◽  
...  
Keyword(s):  
Dilute Nitrides ◽  
Band Anticrossing

Theoretical study of Raman modes in high-pressure phases of Si, Ge, and Sn

1993 ◽  
Vol 48 (6) ◽  
pp. 3646-3653 ◽  
Author(s):  
Steven P. Lewis ◽  
Marvin L. Cohen
Keyword(s):  
High Pressure ◽  
Theoretical Study ◽  
Raman Modes

Assignments of the Raman modes of monoclinic erbium oxide

2013 ◽  
Vol 114 (19) ◽  
pp. 193502 ◽  
Author(s):  
D. Yan ◽  
P. Wu ◽  
S. P. Zhang ◽  
L. Liang ◽  
F. Yang ◽  
...  
Keyword(s):  
Erbium Oxide ◽  
Raman Modes

Observation of low-frequency Raman modes in several halogenated methanes by the optical Kerr effect

1992 ◽  
Vol 191 (5) ◽  
pp. 423-429 ◽  
Author(s):  
R. Back ◽  
G.A. Kenney-Wallace ◽  
W.T. Lotshaw ◽  
D. McMorrow
Keyword(s):  
Kerr Effect ◽  
Low Frequency ◽  
Optical Kerr Effect ◽  
Raman Modes ◽  
Halogenated Methanes

Thickness dependent anisotropy of in-plane Raman modes under different temperatures in supported few-layer WTe2

2021 ◽  
Vol 119 (6) ◽  
pp. 063104
Author(s):  
Yangbo Chen ◽  
Chuyun Deng ◽  
Yuehua Wei ◽  
Jinxin Liu ◽  
Yue Su ◽  
...  
Keyword(s):  
Different Temperatures ◽  
Raman Modes

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

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