An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

2020 ◽  
Vol 54 (9) ◽  
pp. 095107
Author(s):  
Fangzhou Wang ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Zeheng Wang ◽  
Qi Zhou ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Control ◽  
Control Capability

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

2014 ◽  
Vol 35 (11) ◽  
pp. 114003 ◽  
Author(s):  
S. Theodore Chandra ◽  
N. B. Balamurugan ◽  
G. Subalakshmi ◽  
T. Shalini ◽  
G. Lakshmi Priya
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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