Abstract
In this study, a normally-off AlGaN/GaN MIS-FET based on the combination of tri-gate and recessed MIS gate is fabricated and characterized. The recessed tri-gate MIS-FET is manufactured by micro-level trenches, defining the fin-shaped channel and improving the gate control capability. The recessed surface is cleaned by a diluted BOE, HCl solution, and TMAH treatment before a 20-nm Al2O3 deposition by ALD. After deposition, post-deposition annealing was carried out. Recessed tri-gate MIS-FET demonstrates a high threshold voltage of 3.1 V, a high drain current of 1121 mA/mm, and an on/off current ratio of 2×108. A smaller on-resistance of 5.4 Ω·mm compared with recessed planar MIS-FET of 12.7 Ω·mm is achieved. Besides, the devices show a low I-V hysteresis. All experimental results confirm micro-level trenches realize the advantages of the recessed tri-gate structures, which supports a promising technique to pursue the normally-off operation of GaN HEMTs.