Effect of quantum confinement on lifetime of anharmonic decay of optical phonons in semiconductor nanostructures

2018 ◽  
Vol 30 (35) ◽  
pp. 355302 ◽  
Author(s):  
D Datta ◽  
K Krishnababu ◽  
M A Stroscio ◽  
M Dutta
2009 ◽  
Vol 1209 ◽  
Author(s):  
Shiva Hullavarad ◽  
Nilima Hullavarad

AbstractNanoparticles, nanowires, nanorods and other kinds of nanostructures have been of great interest to scientific field. Semiconducting nanowires have attracted much attention due to the fact that reduced dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale optoelectronic devices, highly quantum efficient lasers and non-linear optical converters. It is generally accepted that the low dimensional structures (where the size in one direction is equivalent to or smaller than the de Broglie wavelength) are useful materials for investigating the dependence of electrical and thermal transport or mechanical properties on the dimensionality and quantum confinement. Nanomaterials also play an important role as functional units in fabricating the electromechanical devices. Semiconductor nanostructures of different materials and shapes are investigated due to their size dependent electronic properties observable at dimensions comparable to or less than Bohr radius of exciton in these materials. Especially various oxides and sulphides have generated interests in variety of applications. In this paper, the recent progress in various nanostructures, paradigms in implementation and technology hurdles in implementing nanostructures are discussed


1998 ◽  
Vol 23 (5) ◽  
pp. 1103-1106 ◽  
Author(s):  
A.M. de Paula ◽  
L.C. Barbosa ◽  
C.H.B. Cruz ◽  
O.L. Alves ◽  
J.A. Sanjurjo ◽  
...  

1966 ◽  
Vol 148 (2) ◽  
pp. 845-848 ◽  
Author(s):  
P. G. Klemens

1998 ◽  
Vol 57 (19) ◽  
pp. 12285-12290 ◽  
Author(s):  
Xin-Qi Li ◽  
Yasuhiko Arakawa

Author(s):  
И.Е. Тысченко ◽  
Г.К. Кривякин ◽  
В.А. Володин

AbstractThe nucleation of the crystalline Ge phase in SiO_ x N_ y films implanted with Ge^+ ions with the energy 55 keV to doses of 2.1 × 10^15–1.7 × 10^16 cm^–2 and then annealed at a temperature of T _a = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.


2015 ◽  
Vol 84 (2) ◽  
pp. 024708 ◽  
Author(s):  
Muneaki Hase ◽  
Kiminori Ushida ◽  
Masahiro Kitajima

1995 ◽  
Vol 405 ◽  
Author(s):  
Y. S. Tang ◽  
C. M. Sotomayor Torres

AbstractSemiconductor quantum wires and dots have been fabricated in GaAs/AlGaAs, CdTe/CdMnTe and Si/SiGe multiple quantum wells using electron beam patterning and reactive ion etching and studied by photoreflectance, photoluminescence and Raman scattering. It was found that the smaller the lateral size of the nanostructure, the smaller the fabrication induced residual strain. In all cases, the dominant strain component is found to be parallel to the sample growth direction, i.e., along the etched sidewalls of the etched wires and dots. The lateral confining potential is found to be quasi-parabolic for polar semiconductor systems. Possible ways of using and controlling the damage and residual strain in nanostructures are discussed in the context of device applications of nanostructures.


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