Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices

2019 ◽  
Vol 30 (33) ◽  
pp. 335601 ◽  
Author(s):  
Nikolina Nekić ◽  
Iva Šarić ◽  
Krešimir Salamon ◽  
Lovro Basioli ◽  
Jordi Sancho-Parramon ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ge Quantum Dot ◽  
Amorphous Al2o3

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime

Nano Futures ◽  
2020 ◽  
Vol 4 (1) ◽  
pp. 015001
Author(s):  
Yu-Hong Kuo ◽  
Shih-Hsuan Chiu ◽  
Che-Wei Tien ◽  
Sheng-Di Lin ◽  
Wen-Hao Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Size ◽  
Exciton Lifetime ◽  
Ge Quantum Dot

Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy

2005 ◽  
Vol 44 (No. 33) ◽  
pp. L1045-L1047
Author(s):  
Chie-In Lee ◽  
Yan-Ten Lu ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Jenn-Shyong Hwang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Photoreflectance Spectroscopy ◽  
Self Assembled ◽  
Ge Quantum Dot

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

2003 ◽  
Vol 20 (11) ◽  
pp. 2001-2003 ◽  
Author(s):  
Yang Zheng ◽  
Shi Yi ◽  
Liu Jian-Lin ◽  
Yan Bo ◽  
Huang Zhuang-Xiong ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Phonon Confinement ◽  
Self Assembled ◽  
Ge Quantum Dot

Structural properties of templated Ge quantum dot arrays: impact of growth and pre-pattern parameters

2018 ◽  
Vol 29 (27) ◽  
pp. 275601 ◽  
Author(s):  
J Tempeler ◽  
S Danylyuk ◽  
S Brose ◽  
P Loosen ◽  
L Juschkin
Keyword(s):  
Quantum Dot ◽  
Structural Properties ◽  
Ge Quantum Dot

Thermal conductivity of Si–Ge quantum dot superlattices

2011 ◽  
Vol 22 (15) ◽  
pp. 155701 ◽  
Author(s):  
J B Haskins ◽  
A Kinaci ◽  
T Çağin
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dot ◽  
Ge Quantum Dot

Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Vacuum ◽  
2012 ◽  
Vol 86 (6) ◽  
pp. 733-736 ◽  
Author(s):  
M. Buljan ◽  
U.V. Desnica ◽  
I. Bogdanović-Radović ◽  
N. Radić ◽  
M. Ivanda ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ge Quantum Dot
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