Phonon thermal rectification in hybrid graphene-$\mathrm{C_{3}N}$: a molecular dynamics simulation

2020 ◽  
Vol 31 (48) ◽  
pp. 485401
Author(s):  
O Farzadian ◽  
A Razeghiyadaki ◽  
C Spitas ◽  
K V Kostas
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Dynamics Simulation ◽  
Thermal Rectification

Thermal Rectification in Silicon Nanowires With Mass Gradients

2008 ◽  
Author(s):  
Shuai-Chuang Wang ◽  
Xin-Gang Liang ◽  
Xiang-Hua Xu
Keyword(s):  
Molecular Dynamics ◽  
Heat Flux ◽  
Molecular Dynamics Simulation ◽  
Silicon Nanowires ◽  
Dynamics Simulation ◽  
Effect Of Temperature ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Thermal Rectification ◽  
Axial Mass

Thermal rectification as a new phenomenon is attracting great attention. Thermal rectification in silicon nanowires with axial mass gradient is investigated by molecular dynamics simulation. The results of the simulations show that the thermal conductivities are different for the heat flux with opposite directions. The rectification efficiency becomes larger when the mass gradient increases. The effect of temperature gradient on the thermal rectification is also considered. The phonon density of states is calculated to explain the phenomenon. It is found that the interface is responsible to the thermal rectification.

Evaluation of Thermal Rectification at the Interface of Double-Layered Nanofilm by Molecular Dynamics Simulations

2008 ◽  
Author(s):  
Juekuan Yang ◽  
Zhenghua Liu ◽  
Yujuan Wang ◽  
Yunfei Chen
Keyword(s):  
Molecular Dynamics ◽  
High Temperature ◽  
Molecular Dynamics Simulation ◽  
Thermal Resistance ◽  
Dynamics Simulation ◽  
Interfacial Thermal Resistance ◽  
Thermal Rectification ◽  
Simulation Results ◽  
Dynamics Simulations ◽  
Increasing Temperature

The thermal rectification at the interface of double-layered nanofilm is investigated by molecular dynamics simulation. It is found that the interfacial thermal resistance is asymmetric, namely, it depends on the direction of heat flow across the interface. And at high temperature, the rectification of interfacial thermal resistance decreases with increasing temperature. The simulation results also demonstrated that the rectifying effects can not be interpreted only by temperature difference at interface.

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