scholarly journals Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling

2021 ◽  
Author(s):  
Maria D'Antuono ◽  
Alexey Kalaboukhov ◽  
Roberta Caruso ◽  
Shai Wissberg ◽  
Sapir Weitz Sobelman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Transport ◽  
Electron System ◽  
Milling Process ◽  
Dimensional Electron ◽  
Ion Milling ◽  
Dimensional Electron System ◽  
Patterning Technique ◽  
The One ◽  
Scanning Squid

Abstract We present a "top-down" patterning technique based on ion milling performed at low- temperature, for the realization of oxide two-dimensional electron system (2DES) devices with dimensions down to 160 nm. Using electrical transport and scanning SQUID measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

scholarly journals Unequal on-site interaction effects in the one-dimensional electron system at quarter filling

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Hanqin Ding ◽  
Yan Xu ◽  
Weiting Chen
Keyword(s):  
Density Wave ◽  
Spin Density Wave ◽  
Electron System ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Correlated Electron ◽  
Dimensional Electron System ◽  
The One ◽  
A Charge ◽  
Correlated Electron System

AbstractThe one-dimensional antiferromagnetic correlated electron system described by the unusual t–U–J model with alternating on-site interactions at odd ($$U_o$$ U o ) and even ($$U_e$$ U e ) sites is studied analytically. At weak coupling, the use of bosonization and renormalization-group techniques helps to obtain ground-state phase diagram. At quarter filling, the unequal on-site repulsion ($$U_e\ne U_o$$ U e ≠ U o ) causes the occurrence of umklapp processes and the generation of a charge excitation gap. Contrary to the usual case ($$U_e=U_o$$ U e = U o ), the system is not metallic but insulating. For $$U_e+U_o<2J$$ U e + U o < 2 J , the system is in a spin-gapped phase with charge-density-wave (CDW) instability; for $$U_e+U_o\ge 2J$$ U e + U o ≥ 2 J , the system is in a spin-gapless phase characterized by the coexistence of both CDW and spin-density-wave (SDW) instabilities, where the SDW correlation dominates over the CDW one.

New Results of Ultra-Low Temperature Experiments in the Second Landau Level in a Two-Dimensional Electron System

2004 ◽  
Vol 134 (1/2) ◽  
pp. 579-583 ◽  
Author(s):  
J. S. Xia ◽  
W. Pan ◽  
C. L. Vicente ◽  
E. D. Adams ◽  
N. S. Sullivan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Landau Level ◽  
Electron System ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Dimensional Electron System

CBED study of low-temperature InP grown by gas source MBE

1993 ◽  
Vol 51 ◽  
pp. 810-811
Author(s):  
R. Rajesh ◽  
M.J. Kim ◽  
J.S. Bow ◽  
R.W. Carpenter ◽  
G.N. Maracas
Keyword(s):  
Low Temperature ◽  
Second Phase ◽  
Material System ◽  
Ion Milling ◽  
Electrical Measurements ◽  
Gas Source ◽  
Structural And Electrical Properties ◽  
The One ◽  
Lt Inp ◽  
Gas Source Mbe

In our previous work on MBE grown low temperature (LT) InP, attempts had been made to understand the relationships between the structural and electrical properties of this material system. Electrical measurements had established an enhancement of the resistivity of the phosphorus-rich LT InP layers with annealing under a P2 flux, which was directly correlated with the presence of second-phase particles. Further investigations, however, have revealed the presence of two fundamentally different types of precipitates. The first type are the surface particles, essentially an artefact of argon ion milling and containing mostly pure indium. The second type and the one more important to the study are the dense precipitates in the bulk of the annealed layers. These are phosphorus-rich and are believed to contribute to the improvement in the resistivity of the material.The observation of metallic indium islands solely in the annealed LT layers warranted further study in order to better understand the exact reasons for their formation.

Sign in / Sign up

Export Citation Format

Share Document