GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy

2021 ◽  
Author(s):  
Chalermchai Himwas ◽  
Visittapong Yordsri ◽  
Chanchana Thanachayanont ◽  
Maria Tchernycheva ◽  
Somsak Panyakeow ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Core Shell ◽  
Hexagonal Prism ◽  
Multiple Quantum ◽  
Optical Applications ◽  
Shell Nanowires

Abstract We report on the growth, structural, and optical properties of GaAs/GaAsPBi core-shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared optical applications. Scanning electron microscopy shows that although the stems of GaAs/GaAsP and GaAs/GaAsBi core-shell NWs preserve the hexagonal prism shape, the GaAs/GaAsPBi core-shell NWs develop a quasi-three-fold orientational symmetry affected by the hexagonal prismatic core. Detailed structural analyses of a GaAs/GaAsPBi core-shell stem show that it crystallized with zincblende structure with a nominal shell composition of GaAs0.617P0.362Bi0.021. Photoluminescence of GaAs/GaAsPBi core-shell NWs shows the luminescent peak at 1.02 eV with high internal quantum efficiency at room temperature (IQERT ~6%) superior to those of MBE-grown GaAs core NWs and GaAsPBi multiple quantum wells earlier reported. Energy-dispersive X-ray spectroscopy performed on the GaAs/GaAsPBi core-shell NWs yields an estimated bandgap different from the optically measured value. We attribute this discrepancy to the NW compositional fluctuations that also may explain the high IQERT.

Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 2 (5) ◽  
pp. 271-276
Author(s):  
Gordie Brummer ◽  
Denis Nothern ◽  
T.D. Moustakas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Light Emitting

ABSTRACTAlGaN based multiple quantum wells (MQWs) were grown on 8° vicinal 4H p-SiC substrates by plasma-assisted molecular beam epitaxy. The MQWs were designed to emit near 300 nm using the wurtzite k.p model. The MQW periodicity and strain state were measured with X-ray diffraction. The optical properties were characterized with temperature dependent photoluminescence (PL). The internal quantum efficiency was estimated from the ratio of room temperature to 18K integrated PL intensity. Internal quantum efficiency up to 48% was achieved. These data are encouraging for future vertical and inverted ultraviolet light emitting diodes grown on p-SiC substrates.

Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy

2002 ◽  
Vol 19 (8) ◽  
pp. 1152-1154 ◽  
Author(s):  
LÜ You-Ming ◽  
Shen De-Zhen ◽  
Liu Yi-Chun ◽  
Li Bing-Hui ◽  
Liang Hong-Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Patrick Waltereit ◽  
James S. Speck
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Biaxial Tension ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Piezoelectric Polarization

AbstractWe have studied the structural and optical properties of a series of (In,Ga)/GaN multiple quantum wells with identical thicknesses but varied In content grown by plasma-assisted molecular beam epitaxy. Careful choice of the growth parameters returns samples with smooth and abrupt interfaces. The shift of the photoluminescence transition energy with externally applied biaxial tension was investigated. We observed a red-shift for small In contents while a blue-shift was detected for higher In contents. This result is in qualitative agreement with band profile calculations taking into account both the band gap deformation potentials and the piezoelectric polarization in these structures. However, the magnitude of the shift is well in excess of the calculated one. We attribute this finding to a substantial deviation of the piezoelectric constants from those calculated for unstrained material. Finally, we estimate the piezoelectric polarization of InGaN/GaN for linear and non-linear terms in strain.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

2015 ◽  
Vol 30 (10) ◽  
pp. 105036 ◽  
Author(s):  
Pavan Kumar Kasanaboina ◽  
Sai Krishna Ojha ◽  
Shifat Us Sami ◽  
C Lewis Reynolds ◽  
Yang Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Core Shell ◽  
Bandgap Tuning ◽  
Shell Nanowires
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