scholarly journals AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

2019 ◽  
Vol 34 (2) ◽  
pp. 024002 ◽  
Author(s):  
P Sai ◽  
D B But ◽  
I Yahniuk ◽  
M Grabowski ◽  
M Sakowicz ◽  
...  
2011 ◽  
Vol 679-680 ◽  
pp. 613-616 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.


2006 ◽  
Vol 21 (10) ◽  
pp. 1408-1411 ◽  
Author(s):  
J M S Orr ◽  
P D Buckle ◽  
M Fearn ◽  
P J Wilding ◽  
C J Bartlett ◽  
...  

2020 ◽  
Vol 67 (10) ◽  
pp. 4130-4135
Author(s):  
Hai-Qing Xie ◽  
Jie-Ying Li ◽  
Gang Liu ◽  
Xi-Ya Cai ◽  
Zhi-Qiang Fan

1969 ◽  
Vol 16 (2) ◽  
pp. 257-258
Author(s):  
K.E. Drangeid ◽  
S. Middlehoek ◽  
T. Mohr ◽  
P. Wolf

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