Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

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Imaging Schottky Barriers at Carbon Nanotube Contacts

MRS Proceedings ◽

10.1557/proc-706-z11.8.1 ◽

2001 ◽

Vol 706 ◽

Author(s):

Marcus Freitag ◽

A. T. Johnson

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Schottky Barriers ◽

Scanning Gate Microscopy ◽

Gating Mechanism ◽

Effect Transistor ◽

Semiconducting Nanotubes

AbstractWe use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky barriers at the metal contacts, one of which is forward, and one of which is reverse biased. The gating action is only observed at the reverse biased Schottky barrier at the positive electrode. By positioning the gate near one of the contacts, we convert the nanotube field-effect transistor into a rectifying nanotube diode. These experiments both clarify the gating mechanism for nanotube devices and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities at a nanotube field-effect transistor.

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Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/66.401007 ◽

1995 ◽

Vol 8 (3) ◽

pp. 314-318 ◽

Cited By ~ 3

Author(s):

G.C. DeSalvo ◽

T.K. Quach ◽

C.A. Bozada ◽

R.W. Dettmer ◽

K. Nakano ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Schottky Contact ◽

Single Layer ◽

Contact Formation ◽

Effect Transistor

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On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽

10.1557/adv.2017.29 ◽

2017 ◽

Vol 2 (23) ◽

pp. 1249-1257 ◽

Cited By ~ 1

Author(s):

F. Michael Sawatzki ◽

Alrun A. Hauke ◽

Duy Hai Doan ◽

Peter Formanek ◽

Daniel Kasemann ◽

...

Keyword(s):

Charge Transport ◽

Organic Semiconductors ◽

Organic Solar Cells ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Electrical Power ◽

Strong Impact ◽

Organic Field Effect Transistor ◽

Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

Materials Advances ◽

10.1039/d1ma00215e ◽

2021 ◽

Author(s):

Suman Yadav ◽

Shivani Sharma ◽

Satinder K Sharma ◽

Chullikkattil P. Pradeep

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Effect Transistor ◽

Solution Processable ◽

P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870051 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870051 ◽

Cited By ~ 2

Author(s):

Luqi Tu ◽

Xudong Wang ◽

Jianlu Wang ◽

Xiangjian Meng ◽

Junhao Chu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Effect Transistor

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Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/c6tc02601j ◽

2016 ◽

Vol 4 (37) ◽

pp. 8758-8764 ◽

Cited By ~ 18

Author(s):

Gaole Dai ◽

Jingjing Chang ◽

Linzhi Jing ◽

Chunyan Chi

Keyword(s):

Organic Semiconductors ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Processing Technique ◽

Solution Processing ◽

Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

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Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

Journal La Multiapp ◽

10.37899/journallamultiapp.v1i2.108 ◽

2020 ◽

Vol 1 (2) ◽

pp. 14-21

Author(s):

Chaw Su Nandar Hlaing Chaw ◽

Thiri Nwe

Keyword(s):

Zinc Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Characteristic Curve ◽

Vital Role ◽

Semiconductor Material ◽

Mathematical Equations ◽

Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

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Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽

10.3390/nano11113121 ◽

2021 ◽

Vol 11 (11) ◽

pp. 3121

Author(s):

Monica La Mura ◽

Patrizia Lamberti ◽

Vincenzo Tucci

Keyword(s):

High Frequency ◽

Communication Systems ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Channel Length ◽

Geometrical Parameters ◽

Effect Transistor ◽

Rf Performance ◽

The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

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