A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures
2010 ◽
Vol 28
(4)
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pp. 799-801
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2021 ◽
Vol 134
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pp. 106046
Keyword(s):
2020 ◽
Vol 21
(3)
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pp. 339-347
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1997 ◽
Vol 9
(8)
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pp. 1143-1145
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