Regimes of current transport mechanisms in CdS/CdTe solar cells

2019 ◽  
Vol 34 (7) ◽  
pp. 075013 ◽  
Author(s):  
H Bayhan ◽  
E T Dağkaldıran ◽  
J D Major ◽  
K Durose ◽  
M Bayhan
2004 ◽  
Vol 836 ◽  
Author(s):  
Scott Feldman ◽  
Tim Ohno ◽  
Victor Kaydanov ◽  
Reuben Collins

ABSTRACTWe have explored a large range of experimental space for photoluminescence (PL) and electroluminescence (EL) measurements of CdS/CdTe solar cells. This space includes changes in temperature, injection intensity (laser power for PL, current for EL), electrical bias for PL, and laser energy for PL. Measurements were resolved both spectrally and spatially (2D for EL, 1D for PL). Combination of EL and PL measurements revealed that most spatial inhomogeneity was the result of non-uniform current transport rather than local variations in recombination rate. The greatest spectral resolution was obtained with low temperature EL at low injection rates. High injection EL as well as high forward biased PL suppressed band-edge emission at low temperatures. Spectral structure was found to be greater in EL than in PL. These effects likely originated from preferential current transport along grain boundaries and/or certain grains.


2018 ◽  
Vol 8 (6) ◽  
pp. 1767-1772 ◽  
Author(s):  
Aobo Ren ◽  
Hao Xu ◽  
Amaury Delamarre ◽  
Cai Liu ◽  
Lili Wu ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sara Jäckle ◽  
Matthias Mattiza ◽  
Martin Liebhaber ◽  
Gerald Brönstrup ◽  
Mathias Rommel ◽  
...  

2013 ◽  
Vol 42 (11) ◽  
pp. 3175-3180 ◽  
Author(s):  
F. Troni ◽  
R. Menozzi ◽  
E. Colegrove ◽  
C. Buurma

2001 ◽  
Vol 668 ◽  
Author(s):  
Gaurav A. Naik ◽  
Wayne A. Anderson

ABSTRACTCopper indium gallium selenide (CIGS) solar cells on thin film stainless steel substrates were evaluated by current-voltage-temperature (IVT) from 150K-350K to determine current transport mechanisms. Both dark and photo data at reverse and low forward voltages exhibited tunneling-like behavior. At intermediate forward voltages, diffusion or thermionic emission are suggested by an ideality factor close to 1.0. At higher currents and voltages there is a trend towards recombination or space change limited behavior.


Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.


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