Current Transport Mechanisms in CuIn1−xGaxSe2 and CIS Thin-Film Solar Cells on Flexible Stainless Steel Substrates

2001 ◽  
Vol 668 ◽  
Author(s):  
Gaurav A. Naik ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Solar Cells ◽  
Thermionic Emission ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Copper Indium ◽  
Current Voltage ◽  
Cigs Solar Cells ◽  
Steel Substrates

ABSTRACTCopper indium gallium selenide (CIGS) solar cells on thin film stainless steel substrates were evaluated by current-voltage-temperature (IVT) from 150K-350K to determine current transport mechanisms. Both dark and photo data at reverse and low forward voltages exhibited tunneling-like behavior. At intermediate forward voltages, diffusion or thermionic emission are suggested by an ideality factor close to 1.0. At higher currents and voltages there is a trend towards recombination or space change limited behavior.

scholarly journals Comparison Study of a-SiGe Solar Cells and Materials Deposited Using Different Hydrogen Dilution

2000 ◽  
Vol 609 ◽  
Author(s):  
H. Povolny ◽  
P. Agarwal ◽  
S. Han ◽  
X. Deng
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Ir Transmission ◽  
Cell Current ◽  
Steel Substrates

ABSTRACTA-SiGe n-i-p solar cells with i-layer deposited via plasma enhanced chemical vapor deposition (PECVD) with a germane to disilane ratio of 0.72 and hydrogen dilution R=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240 were deposited on stainless steel substrates. This germane to disilane ratio is what we typically use for the i-layer in the bottom cell of our standard triple-junction solar cells. Solar cell current-voltage curves (J-V) and quantum efficiency (QE) were measured for these devices. Light soaking tests were performed for these devices under 1 sun light intensity at 50° C. While device with R=30 showed the highest initial efficiency, the device with R=120 exhibit higher stabilized efficiency after 1000 hours of light soaking.Single-layer a-SiGe films (∼500 nm thick) were deposited under the same conditions as the i-layer of these devices on a variety of substrates including 7059 glass, crystalline silicon, and stainless steel for visible-IR transmission spectroscopy, FTIR, and hydrogen effusion studies. It is interesting to note 1) the H content in the film decreased with increasing R based on both the IR and H effusion measurements, and 2) while the H content changes significantly with different R, the change in Eg is relatively small. This is most likely due to a change in Ge content in the film for different R.

scholarly journals On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Abbas Sabahi Namini ◽  
Mehdi Shahedi Asl ◽  
Gholamreza Pirgholi-Givi ◽  
Seyed Ali Delbari ◽  
Javid Farazin ◽  
...  
Keyword(s):  
Series Resistance ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Current Voltage ◽  
Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

scholarly journals Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 5182
Author(s):  
Igor Perlikowski ◽  
Eunika Zielony ◽  
Teoman Özdal ◽  
Hamide Kavak
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Thin Film Solar Cells ◽  
Grain Structure ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Device Structure ◽  
Current Voltage ◽  
Scattering Measurements

In the present study, we provide useful data related to one of the most promising materials in thin-film solar cell technologies: Cu2ZnSnS4 (CZTS) kesterite structures. Sol-gel spin coating and chemical bath deposition methods were used to fabricate and further investigate Mo/CZTS/CdS/ZnO/AZO heterostructures. In order to examine the crystal structure of the samples, Raman scattering measurements using two excitation wavelengths (514.5 nm and 785 nm) were performed. Three Raman bands related to CZTS were found, as well as one that had its origin in CdS. By using laser ablation and performing Raman spectroscopy on these modified samples, it was shown that during the manufacturing process a MoS2 interlayer was formed between the CZTS and Mo layers. Our method proved that the CZTS layer in a multilayer device structure fabricated by solution-based methods can be decomposed, and thus a detailed analysis of the layer can be performed. Subsequently, current-voltage curves were investigated in terms of the essential electrical properties of glass/Mo/p-CZTS/n-CdS/ZnO/AZO junctions and occurring current transport mechanisms. Finally, AFM data were acquired to study the surface topography of the studied samples. The images showed that these surfaces had a uniform grain structure.

Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates

2011 ◽  
Author(s):  
Dodji Amouzou ◽  
Philippe Guaino ◽  
Jacques Dumont ◽  
Lionel Fourdrinier ◽  
Jean-Baptiste Richir ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Thermal Barrier ◽  
Barrier Layers ◽  
Cigs Solar Cells ◽  
Steel Substrates
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