Angular dependence of the critical current density in FeSe0.5Te0.5 thin films on metal substrates

Author(s):  
Fan Fan ◽  
Xianping Zhang ◽  
Chuanbing Cai ◽  
Yanwei Ma
2005 ◽  
Vol 15 (2) ◽  
pp. 3734-3737 ◽  
Author(s):  
T. Horide ◽  
K. Matsumoto ◽  
A. Ichinose ◽  
Y. Yoshida ◽  
S. Horii ◽  
...  

2006 ◽  
Author(s):  
A. Augieri ◽  
G. Celentano ◽  
L. Ciontea ◽  
J. Halbritter ◽  
V. Galluzzi ◽  
...  

Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  

1989 ◽  
Vol 169 ◽  
Author(s):  
X.K. Wang ◽  
D.X. Li ◽  
S.N. Song ◽  
J.Q. Zheng ◽  
R.P.H. Chang ◽  
...  

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.


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