scholarly journals Photometric Precision of a Si:As Impurity Band Conduction Mid-infrared Detector and Application to Transit Spectroscopy

2019 ◽  
Vol 131 (1006) ◽  
pp. 124502 ◽  
Author(s):  
Taro Matsuo ◽  
Thomas P. Greene ◽  
Roy R. Johnson ◽  
Robert E. Mcmurray ◽  
Thomas L. Roellig ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Impurity Band ◽  
Mid Infrared ◽  
Band Conduction

Development of Si:As impurity band conduction (IBC) detectors for mid-infrared applications

2003 ◽  
Author(s):  
Ken J. Ando ◽  
Alan W. Hoffman ◽  
Peter J. Love ◽  
Andrew Toth ◽  
Conrad Anderson ◽  
...  
Keyword(s):  
Impurity Band ◽  
Mid Infrared ◽  
Band Conduction

scholarly journals Improvements in Operating the Raytheon 320 × 240 Pixel Si:As Impurity Band Conduction Mid‐Infrared Array

2003 ◽  
Vol 115 (814) ◽  
pp. 1407-1418 ◽  
Author(s):  
S. Sako ◽  
Y. K. Okamoto ◽  
H. Kataza ◽  
T. Miyata ◽  
S. Takubo ◽  
...  
Keyword(s):  
Impurity Band ◽  
Mid Infrared ◽  
Infrared Array ◽  
Band Conduction

IMPURITY BAND CONDUCTION STUDY BY PIEZORESISTANCE MEASUREMENTS

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU
Keyword(s):  
Impurity Band ◽  
Band Conduction

scholarly journals Impurity band conduction in Si-doped β-Ga2O3 films

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan
Keyword(s):  
Impurity Band ◽  
Si Doped ◽  
Band Conduction

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

Monolithically integrated near-infrared and mid-infrared detector array for spectral imaging

2007 ◽  
Vol 50 (2-3) ◽  
pp. 211-216 ◽  
Author(s):  
S.V. Bandara ◽  
S.D. Gunapala ◽  
D.Z. Ting ◽  
J.K. Liu ◽  
C.J. Hill ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Spectral Imaging ◽  
Detector Array ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Infrared Detector Array

Improved mid infrared detector for high spectral or spatial resolution and synchrotron radiation use

2016 ◽  
Vol 87 (6) ◽  
pp. 063119 ◽  
Author(s):  
Mbaye Faye ◽  
Michel Bordessoule ◽  
Brahim Kanouté ◽  
Jean-Blaise Brubach ◽  
Pascale Roy ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Spatial Resolution ◽  
Infrared Detector ◽  
Mid Infrared ◽  
Radiation Use

Effect of impurity band conduction on the electrical characteristics ofn-type CuInSe2

2001 ◽  
Vol 90 (8) ◽  
pp. 3993-3997 ◽  
Author(s):  
L. Essaleh ◽  
S. M. Wasim ◽  
J. Galibert
Keyword(s):  
Impurity Band ◽  
Electrical Characteristics ◽  
Band Conduction
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