Optimization of 1.3 µm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account
Keyword(s):
2015 ◽
Vol 619
◽
pp. 012011
◽
2013 ◽
Vol 19
(4)
◽
pp. 1901107-1901107
◽