Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode

Laser Physics ◽  
2019 ◽  
Vol 29 (5) ◽  
pp. 056204 ◽  
Author(s):  
Avinash Paliwal ◽  
Kuldip Singh ◽  
Manish Mathew
Keyword(s):  
Laser Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Short Period

scholarly journals Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer

2011 ◽  
Vol 19 (10) ◽  
pp. 9245 ◽  
Author(s):  
A. J. Ghazai ◽  
S. M. Thahab ◽  
H. Abu Hassan ◽  
Z. Hassan
Keyword(s):  
Laser Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer

Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure

2009 ◽  
Vol 94 (21) ◽  
pp. 211103 ◽  
Author(s):  
Rui Li ◽  
Jingming Zhang ◽  
Li Chen ◽  
Huabo Zhao ◽  
Ziwen Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Diode Structure ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Ultraviolet Laser

Efficient carrier transport for 368 nm ultraviolet LEDs with p-AlInGaN/AlGaN short-period superlattice electron blocking layer

2021 ◽  
Author(s):  
Longfei He ◽  
Kang Zhang ◽  
Hualong Wu ◽  
Chenguang He ◽  
Wei Zhao ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Carrier Transport ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Short Period ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum barrier (LQB)/EBL interface, the polarization-induced...

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

scholarly journals Monolayer Hexagonal Boron Nitride: An Efficient Electron Blocking Layer in Organic Photovoltaics

2021 ◽  
pp. 2101238
Author(s):  
Mohammad Mahdi Tavakoli ◽  
Ji‐Hoon Park ◽  
Jeremiah Mwaura ◽  
Mayuran Saravanapavanantham ◽  
Vladimir Bulović ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Organic Photovoltaics ◽  
Hexagonal Boron Nitride ◽  
Blocking Layer ◽  
Electron Blocking Layer
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