Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In 0.53 Ga 0.47 As/In As resonant tunnelling diodes

2008 ◽  
Vol 17 (4) ◽  
pp. 1472-1474 ◽  
Author(s):  
Zhang Yang ◽  
Han Chun-Lin ◽  
Gao Jian-Feng ◽  
Zhu Zhan-Ping ◽  
Wang Bao-Qiang ◽  
...  
2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  

2016 ◽  
Vol 8 (3) ◽  
pp. 1653-1660 ◽  
Author(s):  
Weizhen Liu ◽  
Haiyang Xu ◽  
Siyi Yan ◽  
Cen Zhang ◽  
Lingling Wang ◽  
...  

2015 ◽  
Vol 6 ◽  
pp. 2046-2051 ◽  
Author(s):  
Chamanei S Perera ◽  
Alison M Funston ◽  
Han-Hao Cheng ◽  
Kristy C Vernon

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.


2011 ◽  
Vol 110 (11) ◽  
pp. 113901 ◽  
Author(s):  
S. Bosu ◽  
Y. Sakuraba ◽  
K. Saito ◽  
H. Wang ◽  
K. Takanashi

2009 ◽  
Vol 404 (1) ◽  
pp. 163-166 ◽  
Author(s):  
J. Islam ◽  
Y. Yamamoto ◽  
E. Shikoh ◽  
A. Fujiwara ◽  
H. Hori

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