scholarly journals Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

2015 ◽  
Vol 6 ◽  
pp. 2046-2051 ◽  
Author(s):  
Chamanei S Perera ◽  
Alison M Funston ◽  
Han-Hao Cheng ◽  
Kristy C Vernon
Keyword(s):  
Quantum Dots ◽  
Laser Beam ◽  
Layer Thickness ◽  
Near Field ◽  
Surface Distance ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
20 Nm ◽  
Mode A ◽  
Plasmon Propagation

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.

Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Layer Thickness ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Spacer Layer Thickness ◽  
Spacer Layer

Near Field Optical Spectroscopy of GaN/AlN Quantum Dots

2004 ◽  
Vol 831 ◽  
Author(s):  
A. Neogi ◽  
B. P. Gorman ◽  
H. Morkoç ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Field ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Lateral Coupling ◽  
Self Assembled ◽  
Spectrally Resolved

ABSTRACTWe investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼ 50–60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101 1] facets.

Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness

2011 ◽  
Vol 318 (1) ◽  
pp. 1113-1116
Author(s):  
Kazuma Tani ◽  
Shingo Fuchi ◽  
Ryota Mizutani ◽  
Toru Ujihara ◽  
Yoshikazu Takeda
Keyword(s):  
Quantum Dots ◽  
Layer Thickness ◽  
Spectral Width ◽  
Inas Quantum Dots ◽  
Spacer Layer Thickness ◽  
Spacer Layer

Tem Investigation of Self-Organized Pbse Quantum Dots as a Function of Spacer Layer Thickness and Growth Temperature

1999 ◽  
Vol 583 ◽  
Author(s):  
H. H. Kang ◽  
L. Salamanca-Riba ◽  
M. Pinczolits ◽  
G. Springholz ◽  
V. Holy ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Layer Thickness ◽  
Spatial Correlation ◽  
Growth Temperature ◽  
Stacking Sequence ◽  
Self Organized ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Spacer Thickness ◽  
Vertical Correlation

AbstractThe study of the morphology, lateral and vertical correlation of self-organized PbSe quantum dots in Pb1−xEux Te is presented. The samples consist of quantum dot superlattices of n periods of (PbSe/Pb1−xEux Te) grown on PbTe/(111) BaF2 by the S-K mode using MBE. The Pb1−xEux Te spacer thickness was varied from 34.3nm to 312nm and the growth temperature was varied between 335°C and 380°C. Our TEM results show very good lateral and vertical correlation of the dots. The dots form an array with either a/b/c/a/b/c/... or a/a/a/... vertical stacking sequence along the [111] growth direction. The stacking sequence is accurately controlled by the thickness of the Pb1−xEux Te spacer layer thickness and the growth temperature. The best a/b/c/... spatial correlation was obtained for temperatures around 380°C and spacer thickness of ˜40nm. The dots are highly strained and form triangular pyramids with (111) bases and (100) facets as observed by AFM. The shape of the dots also varied with the Pb1−xEux Te spacer thickness. An analysis of the spatial correlation of the dots' size and shape with respect to spacer thickness and growth temperature is presented.

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