Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
2003 ◽
Vol 20
(5)
◽
pp. 767-769
◽
2008 ◽
Vol 47
(11)
◽
pp. 8297-8304
◽
2011 ◽
Vol 50
(11R)
◽
pp. 110210
◽
2009 ◽
Vol 48
(7)
◽
pp. 071204
◽