Structural and electrical transport properties of charge density wave material LaAgSb2 under high pressure

2021 ◽  
Author(s):  
Bowen Zhang ◽  
Chao An ◽  
Xuliang Chen ◽  
Ying Zhou ◽  
Yonghui Zhou ◽  
...  
Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


2010 ◽  
Vol 97 (17) ◽  
pp. 174101 ◽  
Author(s):  
Ming Li ◽  
Jie Yang ◽  
Karim Snoussi ◽  
Lixin Li ◽  
Huixin Wang ◽  
...  

2002 ◽  
Vol 12 (9) ◽  
pp. 103-108
Author(s):  
E. Slot ◽  
H. S.J. van der Zant

We have fabricated a variety of Charge-Density-Wave (CDW) devices using a focused-ion-beam (FIB) process. The FIB is used to etch any desired geometry in crystals, like constrictions, tears, trenches, zigzag patterns etcetera. We have studied the electrical transport of these devices. This study includes: finite size effects (e.g. dependence of the threshold for CDW sliding on the width while maintaining the same thickness of samples), conduction perpendicular to the chains, geometrical effects and CDW junctions. We have found complete mode-locking on CDW constrictions, indicating that the high-quality crystal properties are preserved after FIB processing. This makes the process a useful technique to study submicron CDW dynamics.


Author(s):  
Yuqiang Li ◽  
Jingxia Liu ◽  
Peiguang Zhang ◽  
Qiang Jing ◽  
Xiaofeng Liu ◽  
...  

The pressure-induced electronic and optical properties of EuTe are investigated up to 35.6 GPa. It is found that EuTe undergoes a pressure-induced NaCl-CsCl structural transition above 13 GPa by first-principles...


2020 ◽  
Vol 55 (30) ◽  
pp. 14873-14882 ◽  
Author(s):  
Yuqiang Li ◽  
Jingxia Liu ◽  
Peiguang Zhang ◽  
Jianxin Zhang ◽  
Ningru Xiao ◽  
...  

2005 ◽  
Vol 131 ◽  
pp. 183-184
Author(s):  
D. Dominko ◽  
D. Starešinić ◽  
K. Biljaković ◽  
P. Lunkenheimer ◽  
A. Loidl

2020 ◽  
pp. 157482
Author(s):  
Haiwa Zhang ◽  
Guozhao Zhang ◽  
Jia Wang ◽  
Qinglin Wang ◽  
Hongyang Zhu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document