Спектры пропускания монокристаллов гибридных перовскитов MAPbI-=SUB=-3-=/SUB=- вблизи края фундаментального поглощения

The paper presents the transmission spectra of hybrid perovskite MAPbI3 single crystals near the fundamental absorption edge in a wide temperature range. The absorption coefficient α of the single crystal samples is estimated at a temperature T = 150 K for the light with a photon energy E = 1.6 eV and at T = 40 K for E = 1.8 eV. The obtained values turned out to be several orders of magnitude smaller than the values of α for thin-film samples known from the literature. A sharp shift of the fundamental absorption edge by ~ 100 meV was observed at a temperature T1 = 160 K of the structural phase transition from the tetragonal to the orthorhombic phase. The temperature hysteresis of the shift of the fundamental absorption edge near T1 was recorded, which is characteristic of a first-order phase transition.

Synthesis, microstructure and effect of high pressures on transport properties of GdBaCo2O5,5

In polycrystalline samples of double layered cobaltite GdBaCo2O5.5 the structure and resistivity at the first order “insulator-metal” (I-M) phase transition were studied at normal and high pressures. The strong dependence of the shape of the temperature hysteresis loop on the rate of temperature change indicates an infra-slow thermal relaxation of conductivity. Baric studies have shown an increase in the transition temperature ТIM at increasing pressure P with baric coefficient dТIM/dP ≈ 10 K/GPa. The spin blockade model is used to explain the observed effects.

Electrophysical and photocatalytic properties of SnO2-ZnO thin films prepared by sol-gel method

Electrophysical properties of SnO2-ZnO thin films prepared by sol-gel method have been studied. The resistance of thin films have a temperature hysteresis, the films resistance decreases up to two times when the temperature reaches 210-300 °C and returns to its initial value when cooling down to 90-30 °C. That phenomenon can be explained by the processes of thermal generation - recombination of electrons, and adsorption - desorption of oxygen on the surface of the films.

Seismic Response Mitigation of a Television Transmission Tower by Shape Memory Alloy Dampers

High-rise television transmission towers are of low damping and may vibrate excessively when subjected to strong earthquakes. Various dynamic absorbers and dampers are proposed to protect television transmission towers from excessive vibrations and damages. Up to now, the seismic damage reduction in television towers, using SMA dampers under seismic excitations, has not been conducted. To this end, the response reduction in a flexible television tower, disturbed by earthquakes using SMA dampers, is conducted in this study. A two-dimensional dynamic model is developed for dynamic computation at first. The mathematical model of an SMA damper is proposed, and the equations of motion of the tower, without and with, are established, respectively. The structural dynamic responses are examined in the time and the frequency domain, respectively. The effects of damper stiffness, service temperature, hysteresis loops, and earthquake intensity on control efficacy are investigated in detail. In addition, the power spectrum density curves, of dynamic responses and the energy responses, are compared to provide deep insights into the developed control approach. The control performance of SMA dampers is compared with that of widely-used friction dampers. The analytical observations indicate that SMA dampers with optimal parameters can substantially reduce the vibrations of TV transmission towers under seismic excitations.

Investigation of phase change materials (PCMs) on the heat transfer performance of building systems

The energy use of building systems contributes to a large percentage of total energy consumption, which requires consideration. Solutions of improvement to save energy are crucial. Phase change materials have been proved to be good candidates to be used in building envelopes for energy save. In this paper, an extended Explicit Finite Element Method (ex-FEM), which has been previously introduced and improved, is taken for simulation of temperatures and heat transfer in simplified multilayer wall constructions, consisting of PCM and insulation. The method has been validated against experimental data measured in a so-called Hot-Box. Temperature data are measured at different positions in a number of simplified multilayer walls. Our results show a reasonable good agreement between the simulations and the experiments, at both heating and cooling considering the temperature hysteresis effect in the PCM. The temperature stabilization ability of the PCM is clear, in both the simulations and the experiments, and particularly in the data when the transition range of the PCM is fully activated and matching the temperature variation in the wall at that particular PCM position. Our ex-FEM tool has here been proved to be able to predict the thermal performance of simplified wall constructions of multiple layers with PCMs incorporated.

Effect of aluminum alloying on the structure and properties of rapidly quenched TiNiCu alloy

The efficiency of shape memory alloys for the MEMS technology has been recently demonstrated. Quasibinary intermetallic TiNi-TiCu alloys produced by rapid quenching from liquid phase in the form of thin (about 40 um) ribbons are an attractive material for the fabrication of micro-actuators due to their narrow temperature hysteresis of the shape memory effect (SME) and relatively large recoverable strain. In order to broaden the functionality of SME microdevices, in this work we have alloyed TiNiCu containing 25 at.% copper with aluminum. The results have shown that alloying with 0.6 at.% Al increases the cast characteristics of the composition and favors its amorphization. Upon crystallization by isothermal annealing or electropulse treatment the resultant microstructure and SME properties of the Al containing alloy change but slightly in comparison with the original alloy however there is a significant shift (by more than 15°C) of the SME temperature range toward lower temperatures.

Structural and Electrical Characteristics of FeTiVO6 Double Perovskite

In this paper, studies of structural as well as electrical characteristics of the double perovskite material FeTiVO6 (iron titanium vanadate), synthesized by a high-temperature mixed oxide reaction method have been discussed. The room temperature X-ray diffraction analysis confirms the formation of a single-phase orthorhombic structure without any secondary phase. All the electrical characteristics (i.e., dielectric, impedance, conductivity and modulus) of the sample, studied at various temperatures (25–300°C) and frequencies (1[Formula: see text]kHz–1[Formula: see text]MHz), provide many remarkable characteristics of the material. The dielectric parameters as a function of frequency explain the presence of different polarization mechanisms based on the Maxwell–Wagner double-layer model. Impedance analysis describes the grain (bulk) and grain boundary (bulk interior) effect on the material using the equivalent RQC-RC circuits. The presence of non-Debye type of relaxation behavior in the material is confirmed by the depressed semicircles of Nyquist plots. The conductivity study provides information about the CBH and OLPT type of conduction phenomenon. The temperature dependence of leakage current behavior follows the Ohmic (semiconductor) and space charge limited conduction mechanisms at a different range of applied fields. The occurrence of the room temperature hysteresis loop obtained from the PE loop tracer confirms the ferroelectric behavior of the studied compound.

Magnetic Aspects and Large Exchange Bias of Ni0.9Co0.1/NiCoO Multilayers

Ultrathin films of Ni0.9Co0.1 were grown by radio frequency magnetron sputtering. By means of a periodic natural oxidation procedure they were transformed into Ni0.9Co0.1/NiCoO multilayers. Room temperature hysteresis loops recorded via the magneto-optic Kerr effect have revealed over all in-plane magnetic anisotropy due to magnetostatic anisotropy. Mild thermal annealing at 250 °C enhanced a tendency for perpendicular magnetic anisotropy, mainly due to an increase of the uniaxial volume anisotropy term. Spin reorientation transition, exchange bias larger than 700 Oe, and strong coercivity enhancement were observed via a superconducting quantum interference device at low temperatures after field cooling.

Ambipolar Behavior of Ge-Intercalated Graphene: Interfacial Dynamics and Possible Applications

For the realization of graphene-based electronic and optic devices, the functionalization of this material becomes essential. Graphene doping through intercalation and tuning the chemical potential is one among other promising concepts. Intercalation of germanium is particularly interesting in view of its ambipolar doping behavior. Both p- and n-type doped graphene and their doping levels were identified by x-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM), and angle-resolved photoemission microspectroscopy (μ-ARPES). The absolute amount of intercalated Ge was determined to be roughly 1 ML and 2 MLs for n- and p-phases, respectively. For the samples in the present study, we utilized the transition from 2 ML to 1 ML Ge via a mix phase after a high temperature annealing. Concrete implementation of mutual distribution of p- and n-phases depends on the temperature, mobility of Ge atoms in the second intercalated layer, and cooling/heating protocol, and can be nicely followed live in low-energy electron microscope (LEEM) during heating/cooling below 500°C. The process has a significant temperature hysteresis, which is an indication of the first-order phase transition. The enhanced Ge diffusion in the second layer can be suitable for tailoring ultrashort junction lengths so that pseudo-spin mismatch can be used in future electronic concepts. Another application can utilize the negative relative refractive index at the p–n boundary and can find possible applications in focusing electron optics.

Studies of Structural and Electrical Characteristics of Multi-substituted Bi0.5Na0.5TiO3 Ferroelectric Ceramics

In this communication, preliminary structural and detailed electrical characteristics of the CaSnO3/CaSeO3 modified Bi0.5Na0.5TiO3 ceramics of a general chemical composition (1–2x) [Bi0.5Na0.5TiO3] + x (CaSnO3) + x (CaSeO3) with x= 0, 0.05, 0.10, 0.15, prepared by high- temperature solid-state reaction method with calcination and sintering temperature 925 oC and 950oC respectively for 5 h, have been reported. Structural and electrical characteristics of the parent compound have significantly been tailored by the addition of the equal percentage of CaSnO3, CaSeO3 over a wide range of temperature (25oC - 400 oC) as well as frequency (1 kHz-1MHz). Analysis of room temperature X-ray diffraction (XRD) data confirmed the development of single-phase compound (with rhombohedral symmetry) with very small amount of impurity phase with higher concentrations (x). In the dielectric spectroscopy, two dielectric peaks are observed at around temperatures 210 oC and 320 oC indicating multiple phase transitions of different types including the ferroelectric to para-electric through anti-ferroelectric. Impedance analysis of data exhibits both negative/positive temperature coefficient of temperature (i.e., semiconductor behavior) of the materials. The Nyquist plots determine the grain and grain boundary effect in capacitive and resistive properties of the materials, and also the non-Debye type of relaxation. The room temperature hysteresis loop confirms the existence of ferroelectricity in the materials. The leakage current characteristics also determine the Ohmic behavior of the materials.