An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

2014 ◽  
Vol 35 (9) ◽  
pp. 096001 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Double Layer ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Tuning Method ◽  
High K ◽  
Work Function Tuning

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Naomi Yoshida ◽  
Xianmin Tang ◽  
Khaled Ahmed ◽  
Giuseppina Conti ◽  
Dave Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Gate Dielectric ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Work Function Tuning ◽  
High K Gate Dielectric

The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

2014 ◽  
Vol 35 (10) ◽  
pp. 106002 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Process Condition ◽  
Gate Stacks ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

2009 ◽  
Vol 94 (25) ◽  
pp. 252905 ◽  
Author(s):  
Z. C. Yang ◽  
A. P. Huang ◽  
L. Yan ◽  
Z. S. Xiao ◽  
X. W. Zhang ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Interface Dipole ◽  
High K
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