Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

2012 ◽  
Vol 41 (7) ◽  
pp. 1936-1940
Author(s):  
Y.W. Chen ◽  
C.M. Lai ◽  
L.W. Cheng ◽  
C.H. Hsu ◽  
C.W. Liang
Keyword(s):  
Work Function ◽  
Valence Band ◽  
Band Edge ◽  
Valence Band Edge ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Aluminum Implantation

Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.

2012 ◽  
Author(s):  
A. Veloso ◽  
S. A. Chew ◽  
Y. Higuchi ◽  
L. A. Ragnarsson ◽  
E. Simoen ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K

In depth analysis of dopant effect on high-k metal gate effective work function

2012 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Deer Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Dopant Effect ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Depth Analysis

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

2014 ◽  
Vol 35 (10) ◽  
pp. 106002 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Process Condition ◽  
Gate Stacks ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K

An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

2014 ◽  
Vol 35 (9) ◽  
pp. 096001 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Double Layer ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Tuning Method ◽  
High K ◽  
Work Function Tuning

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

2009 ◽  
Vol 94 (25) ◽  
pp. 252905 ◽  
Author(s):  
Z. C. Yang ◽  
A. P. Huang ◽  
L. Yan ◽  
Z. S. Xiao ◽  
X. W. Zhang ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Interface Dipole ◽  
High K

Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- $k$/Metal Gate pMOSFET

2010 ◽  
Author(s):  
Y. W. Chen ◽  
C. M. Lai ◽  
T. F. Chiang ◽  
L. W. Cheng ◽  
C. H. Yu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion ◽  
High K

scholarly journals Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1084
Author(s):  
Sivaramakrishnan Ramesh ◽  
Arjun Ajaykumar ◽  
Lars-Åke Ragnarsson ◽  
Laurent Breuil ◽  
Gabriel El Hajjam ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Electrode ◽  
Flat Band ◽  
Nand Flash ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
The Impact ◽  
Gate Work Function

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO2 interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.

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