High infrared transmittance CdS single crystal grown by physical vapor transport

2018 ◽  
Vol 39 (12) ◽  
pp. 123003
Author(s):  
Xiaoqing Huo ◽  
Huaqing Si ◽  
Kun Zhao ◽  
Yingwu Zhang ◽  
Hongjuan Cheng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Infrared Transmittance

Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport

1993 ◽  
pp. 103-108
Author(s):  
H.L. Cotal ◽  
B.G. Markey ◽  
S.W.S. Mckeever ◽  
Gene Cantwell ◽  
W.C. Harsch
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Substrate Quality

scholarly journals Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

2019 ◽  
Vol 216 (16) ◽  
pp. 1970052 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

2012 ◽  
Vol 717-720 ◽  
pp. 1287-1290 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Rafael Dalmau ◽  
Baxter Moody ◽  
H. Spalding Craft ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Single Crystal ◽  
Basal Plane ◽  
High Performance ◽  
Defect Density ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Threading Dislocations ◽  
Crystalline Perfection ◽  
X Ray

Using the physical vapor transport (PVT) method, single crystal boules of AlN have been grown and wafers sliced from them have been characterized by synchrotron white beam X-ray topography (SWBXT) in conjunction with optical microscopy. X-ray topographs reveal that the wafers contain dislocations that are inhomogeneously distributed with densities varying from as low as 0 cm-2 to as high as 104 cm-2. Two types of dislocations have been identified: basal plane dislocations and threading dislocations, both having Burgers vectors of type 1/3<112-0> indicating that their origin is likely due to post-growth deformation. In some cases, the dislocations are arranged in low angle grain boundaries. However, large areas of the wafers are nearly dislocation-free and section X-ray topographs of these regions reveal the high crystalline perfection.

Sublimation Growth and Defect Characterization of AlN Single Crystals

2007 ◽  
Vol 1040 ◽  
Author(s):  
Shaoping Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Zaiyuan Ren ◽  
Jung Han ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Defect Characterization ◽  
Growth Technique ◽  
X Ray ◽  
Sublimation Growth ◽  
Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

SiC single crystal growth by a modified physical vapor transport technique

2005 ◽  
Vol 275 (1-2) ◽  
pp. e555-e560 ◽  
Author(s):  
Peter Wellmann ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Thomas Straubinger ◽  
Albrecht Winnacker ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique
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