scholarly journals Macroscopic effects of dissipative tunneling in semiconductive InAs/GaAs quantum dots

2019 ◽  
Vol 1199 ◽  
pp. 012027
Author(s):  
V D Krevchik ◽  
M B Semenov ◽  
A V Shorokhov ◽  
D O Filatov ◽  
A P Shkurinov ◽  
...  
2016 ◽  
Vol 690 ◽  
pp. 012029
Author(s):  
V D Krevchik ◽  
M B Semenov ◽  
D O Filatov ◽  
R V Zaytsev ◽  
P V Krevchik ◽  
...  

2020 ◽  
Vol 90 (11) ◽  
pp. 1797
Author(s):  
M.Б. Семенов ◽  
В.Д. Кревчик ◽  
Д.O. Филатов ◽  
A.В. Шорохов ◽  
A.П. Шкуринов ◽  
...  

Abstract. In framework of the 2D - dissipative tunneling theory in approximation of a rarefied gas of the «instanton - antiinstanton pairs» at a finite temperature under the conditions of an external electric field, the features of tunneling transport for planar structures with quantum dots (QDs) from colloidal gold, that have metamaterial properties, have been studied. It was experimentally shown that, depending on the positioning of the cantilever needle of a combined atomic force and scanning tunneling microscope (AFM / STM), either above a single quantum dot or between two neighboring quantum dots, either a single or double effect of 2D tunneling bifurcations have been observed, respectively. It is such a double bifurcation regime, as our theoretical model has shown, that is associated with the manifestation of the metamaterial properties by the structure under study. A convincing qualitative agreement between the experimental I – V characteristics and the field dependence of the 2D - dissipative tunneling probability in the two studied modes, taking into account the observed quantum beats in the vicinity of the 2D bifurcation points, has been obtained.


Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora

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