Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)

We report on the results of experimental studies of the photoelectric properties of a GaAs p-i-n photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the 1D dissipative tunneling probability between the QDs.

Особенности двумерных бифуркаций при диссипативном туннелировании электронов в массивах Au наночастиц

In framework of the 2D - dissipative tunneling theory in approximation of a rarefied gas of the «instanton - antiinstanton pairs» at a finite temperature under the conditions of an external electric field, the features of tunneling transport for planar structures with quantum dots (QDs) from colloidal gold, that have metamaterial properties, have been studied. It was experimentally shown that, depending on the positioning of the cantilever needle of a combined atomic force and scanning tunneling microscope (AFM / STM), either above a single quantum dot or between two neighboring quantum dots, either a single or double effect of 2D tunneling bifurcations have been observed, respectively. It is such a double bifurcation regime, as our theoretical model has shown, that is associated with the manifestation of the metamaterial properties by the structure under study. A convincing qualitative agreement between the experimental I – V characteristics and the field dependence of the 2D - dissipative tunneling probability in the two studied modes, taking into account the observed quantum beats in the vicinity of the 2D bifurcation points, has been obtained.