scholarly journals Optical and Structural Properties of Er3+-doped SiO2-ZrO2 Glass-Ceramic Thin Film

2019 ◽  
Vol 1349 ◽  
pp. 012035
Author(s):  
S A Kamil ◽  
N Zulkepli ◽  
I N M Nawi ◽  
N I Razaki ◽  
M K A Rahman
2022 ◽  
Vol 123 ◽  
pp. 111828
Author(s):  
L. Oulmaati ◽  
K. Bouziane ◽  
A. Bouajaj ◽  
M.R. Britel ◽  
F. Enrichi ◽  
...  

Author(s):  
Paul G. Kotula ◽  
C. Barry Carter

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.


Author(s):  
Kestutis Juskevicius ◽  
Emmett Randel ◽  
Le Yang ◽  
Mariana Fazio ◽  
Aaron Davenport ◽  
...  

2012 ◽  
Vol 520 (17) ◽  
pp. 5801-5806 ◽  
Author(s):  
John D. Wrbanek ◽  
Gustave C. Fralick ◽  
Dongming Zhu

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.


2021 ◽  
Vol 2 (2) ◽  
pp. 2021-03162-2021-03162
Author(s):  
Paul H. Mayrhofer
Keyword(s):  

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