Characterization of negative corona plasma discharge reactor using point-to-plane electrode configuration in atmospheric pressure and its application in the treatment of woven natural silk

This researchaimed to obtain Dielectric Barrier Discharge plasma discharge characteristics with and without the placement of natural silkBombyx Mori on one of the electrodes. Furthermore, the strength and the water absorption time of the irradiated silk samples will be analyzed. Plasma discharge is generated by connecting electrodes of point-to-plane configuration with a sheet of glass inserted on the plane electrode at atmospheric conditions. The characterization of plasma discharge, either with or without the natural silk samples' placement on the plane electrode, was performed by increasing A.C.'s high voltage power source to reach arch discharge. Theelectrode spacing varied from 0.7 cm to 2.5 cm with a 0.3 cm increment. Sample irradiation was performed using cold plasma for 5, 15, and 30 minutes respectively. Placing or not placing the natural silk samples on the plane electrode will increase the plasma's discharge current and increase the high voltage. Moreover, increasing the distance between the electrodes and placing the sample on the plane electrode decreases the discharge current. Using Scanning Electron Microscopy, it was found that increasing plasma irradiation time on samples decreases the silk thread'sdiameterand shortening its water absorption time. The strength of irradiated fabric was reduceduntil 15 minutes of irradiation. However, at 30 minutes of irradiation, there was an increase in sample thickness compared to control samples.

Download Full-text

An Atmospheric-Pressure Helium Plasma Jet Induced by an Atmospheric-Pressure Argon Plasma Discharge in a Single-Electrode Configuration

IEEE Transactions on Plasma Science ◽

10.1109/tps.2009.2025763 ◽

2009 ◽

Vol 37 (9) ◽

pp. 1825-1829 ◽

Cited By ~ 6

Author(s):

Shou-Zhe Li ◽

Wen-Tong Huang ◽

Dezhen Wang

Keyword(s):

Atmospheric Pressure ◽

Argon Plasma ◽

Plasma Jet ◽

Plasma Discharge ◽

Electrode Configuration ◽

Helium Plasma

Download Full-text

The effect of gas flow on argon plasma discharge generated with a single-electrode configuration at atmospheric pressure

Physics of Plasmas ◽

10.1063/1.3223848 ◽

2009 ◽

Vol 16 (9) ◽

pp. 093501 ◽

Cited By ~ 24

Author(s):

Shou-Zhe Li ◽

Wen-Tong Huang ◽

Dezhen Wang

Keyword(s):

Atmospheric Pressure ◽

Gas Flow ◽

Argon Plasma ◽

Plasma Discharge ◽

Electrode Configuration

Download Full-text

Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Download Full-text