scholarly journals Computer simulations of solar cells based on silicon/boron phosphide selective contacts

2021 ◽  
Vol 2086 (1) ◽  
pp. 012087
Author(s):  
S Y Kiyanitsyn ◽  
A S Gudovskih

Abstract Silicon solar cells with selective contacts based on boron phosphide (BP) demonstrate a high potential according to simulation. However, the influence of defects created at the BP/Si interface during BP deposition is a critical issue for solar cell performance. The computer simulations were performed to understand how the defects in the near-surface region and at the interface affect the photovoltaic properties. Calculations of the dependence of the characteristics of solar cells on parameters such as the density of interface states, the concentration of defects in the near-surface region, and its width were made.

2012 ◽  
Vol 1447 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Ammar Nayfeh ◽  
Judy L. Hoyt

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.


2013 ◽  
Vol 1 (2-3) ◽  
pp. 139-143 ◽  
Author(s):  
Jing Liu ◽  
Xinshuai Zhang ◽  
Marina Ashmkhan ◽  
Gangqiang Dong ◽  
Yuanxun Liao ◽  
...  

2016 ◽  
Vol 92 ◽  
pp. 217-223 ◽  
Author(s):  
Malek Atyaoui ◽  
Atef Atyaoui ◽  
Marwen Khalifa ◽  
Jalel Elyagoubi ◽  
Wissem Dimassi ◽  
...  

2022 ◽  
Vol 236 ◽  
pp. 111534
Author(s):  
Andreas Fell ◽  
Johannes Greulich ◽  
Frank Feldmann ◽  
Christoph Messmer ◽  
Jonas Schön ◽  
...  

2014 ◽  
Vol 2 (37) ◽  
pp. 7715-7721 ◽  
Author(s):  
Kejia Jiao ◽  
Xueliang Wang ◽  
Yu Wang ◽  
Yunfa Chen

Interface tailoring is an effective approach towards high performance Graphene/Silicon Schottky-barrier solar cells. Inserting a thin graphene oxide (GO) interfacial layer can improve the efficiency of graphene/silicon solar cells by >100%. Further performance optimization leads to 12.3% of power conversion efficiency (PCE). To date, a record PCE has been achieved on the same device level.


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