Kelvin-probe microscopy as a technique of estimation of the charge traps saturation time
2021 ◽
Vol 2103
(1)
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pp. 012067
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Abstract In this work, a method for estimating the saturation time of traps in dielectric layers based on the KPM is proposed. Using hafnium oxide layers as an example, it is shown that when charging with a series of points with different durations, a different dependence of the residual potential on time is observed. It is assumed that this technique makes it possible to evaluate the performance of devices based on dielectric layers.
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2018 ◽
Vol 10
(7)
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pp. 6755-6763
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2013 ◽
Vol 13
(12)
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pp. 8217-8223
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2018 ◽
Vol 1124
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pp. 081028
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